RFP22N10, RF1S22N10SM
Data Sheet
July 1999
File Number
2385.3
22A, 100V, 0.080 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA9845.
Features
• 22A, 100V
• r
DS(ON)
= 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFP22N10
RF1S22N10SM
PACKAGE
TO-220AB
TO-263AB
BRAND
RFP22N10
F1S22N10
Symbol
D
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
(FLANGE)
4-499
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
RFP22N10, RF1S22N10SM
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP22N10,
RF1S22N10SMS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
100
100
±20
22
50
100
0.67
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0 (Figure 7)
V
GS
= V
DS
, I
D
= 250µA (Figure 9)
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
C
= 150
o
C
MIN
100
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 80V, I
D
≈
22A,
R
L
= 3.64Ω
I
g(REF)
= 1mA
(Figure 11)
-
-
-
-
TO-220 and TO-263
-
TYP
-
-
-
-
-
-
-
13
24
65
18
-
-
-
-
-
-
MAX
-
4
1
50
±100
0.080
60
-
-
-
-
120
150
75
3.5
1.5
62
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
G(TOT)
Q
G(10)
Q
G(TH)
R
θJC
R
θJA
V
GS
=
±20V,
V
DS
= 0
I
D
= 22A, V
GS
= 10V (Figure 8)
V
DD
= 50Vwwwwwwwww, I
D
= 11A,
R
L
= 4.5Ω, V
GS
= 10V,
R
GS
= 25Ω
(Figure 11)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.
SYMBOL
V
SD
t
rr
I
SD
= 22A
I
SD
= 22A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
200
UNITS
V
ns
4-500
RFP22N10, RF1S22N10SM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
175
I
D
, DRAIN CURRENT (A)
Unless otherwise Specified
25
20
15
10
5
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
I
D
MAX (CONTINUOUS)
I
D
, DRAIN CURRENT (A)
10
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
1
DC OPERATION
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
100
V
GS
= 20V
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
V
DSS(MAX)
= 100V
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
50
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
40
V
GS
= 8V
30
V
GS
= 6V
V
GS
= 7V
I
D
, DRAIN CURRENT (A)
50
PULSE DURATION = 80µs
V
DS
= 15V
DUTY CYCLE = 0.5% MAX.
T
C
= -55
o
C
30
T
C
= 175
o
C
T
C
= 25
o
C
40
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 5V
20
10
V
GS
= 4V
0
10
0
0
2
4
6
8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSER CHARACTERISTICS
4-501
RFP22N10, RF1S22N10SM
Typical Performance Curves
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 250µA
Unless otherwise Specified
(Continued)
3.0
2.5
I
D
= 22A, V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
2.0
1.5
1.0
0.5
0
-50
1.0
0.5
0
-50
100
50
150
0
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.50
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE THRESHOLD
VOLTAGE
1.25
1.00
0.75
0.50
0.25
0
-50
C, CAPACITANCE (pF)
2500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
2000
1500
C
ISS
1000
500
C
RSS
0
50
100
150
200
0
0
5
10
15
20
T
J
, JUNCTION TEMPERATURE (
o
C)
C
OSS
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
GATE
TO
SOURCE
VOLTAGE
R
L
= 4.55Ω
I
G(REF)
= 1mA
V
GS
= 10V
75
7.5
V
DD
= V
DSS
V
DD
= V
DSS
50
0.75V
DSS
0.50V
DSS
0.25V
DSS
0.75V
DSS
0.50V
DSS
0.25V
DSS
5
25
2.5
DRAIN TO SOURCE VOLTAGE
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
4-502
RFP22N10, RF1S22N10SM
S
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
I
AS
+
t
P
V
DS
V
DD
-
V
DD
0V
I
AS
0.01Ω
0
t
AV
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
t
ON
t
d(ON)
V
DS
V
DS
V
GS
R
L
+
t
OFF
t
d(OFF)
t
r
t
f
90%
90%
DUT
R
GS
V
GS
-
V
DD
0
10%
90%
10%
V
GS
0
10%
50%
PULSE WIDTH
50%
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
V
DS
R
L
V
DD
Q
g(TOT)
Q
gd
Q
gs
V
GS
V
GS
+
V
DD
-
DUT
I
G(REF)
I
G(REF)
0
0
V
DS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
4-503
京公网安备 11010802033920号
EEWORLD
