Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4
1.7
0.25
MAX.
1500
700
8
15
45
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
µs
T
hs
≤
25 ˚C
I
C
= 4 A; I
B
= 0.8 A
f = 16kHz
I
F
= 4 A
I
Csat
= 4 A; f = 16kHz
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
35
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.7
-
UNIT
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
CONDITIONS
MIN.
-
-
-
7.5
-
700
TYP.
-
-
160
13.5
45
-
-
-
-
5
-
-
14
7
1.7
MAX.
1.0
2.0
-
-
-
-
5
1.1
-
9
2.0
UNIT
mA
mA
mA
V
Ω
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
Emitter-base breakdown voltage
I
B
= 600 mA
Base-emitter resistance
V
EB
= 7.5 V
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 0.8 A
Base-emitter saturation voltage
DC current gain
Diode forward voltage
I
C
= 4 A; I
B
= 0.8 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 4 A; V
CE
= 5 V
I
F
= 4 A
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 4 A; I
B(end)
= 0.7 A; L
B
= 6
µH;
-V
BB
= 4 V
TYP.
68
MAX.
-
UNIT
pF
µs
µs
t
s
t
f
5.0
0.25
6.0
0.5
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507DX
TRANSISTOR
IC
DIODE
ICsat
100
hFE
VCE = 1 V
BU2507DF/X
Ths = 25 C
Ths = 85 C
t
IB
IBend
t
20us
26us
64us
10
VCE
t
1
0.01
0.1
1
IC / A
10
Fig.1. Switching times waveforms.
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
ICsat
90 %
IC
100
hFE
VCE = 5 V
BU2507DF/X
Ths = 25 C
Ths = 85 C
10 %
tf
ts
IB
IBend
t
10
t
1
0.01
0.1
10
- IBM
1
IC / A
Fig.2. Switching times definitions.
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
+ 150 v nominal
adjust for ICsat
10
VCESAT / V
Ths = 25 C
Ths = 85 C
BU2507DF/X
1mH
1
IC/IB = 3
IC/IB = 4
IC/IB = 5
D.U.T.
IBend
LB
12nF
Rbe
0.1
-VBB
0.01
0.1
1
10
IC / A
100
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507DX
1.2
1.1
1
0.9
0.8
0.7
0.6
VBEsat / V
BU2507DF/DX
Ths = 25 C
Ths = 85 C
IC = 4 A
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
IC = 3 A
0
0
0.5
1
1.5
IB / A
2
20
40
60
80
Ths / C
100
120
140
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
mb
)
10
Ptot / W
BU2507AF/DF/AX/DX
10
Zth / K/W
BU2507AF/X/DF/X
Ths = 25 C
Ths = 85 C
0.5
1
0.2
0.1
0.05
0.02
P
D
t
p
D=
t
p
T
t
1
0.1
0.01
D=0
T
0.1
0.001
1E-06
1E-4
10E-2
t/s
1E+00
0
0.5
1
IB / A 1.5
2
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
= 4 A; f = 16 kHz
ts/tf/ us
Fig.11. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
10
BU2507AF/AX/Df/DX85ts/tf
8
6
4
2
0
0
0.5
1
1.5
IB / A
2
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); I
C
= 4.0 A; T
j
= 85˚C; f = 16 kHz
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1507DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
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