BUK9620-100A datasheet, PDF - EEWORLD Datasheet

BUK9620-100A: DescriptionTRANSISTOR 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size179KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK9620-100A Overview

TRANSISTOR 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	420 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	63 A
Maximum drain current (ID)	63 A
Maximum drain-source on-resistance	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Maximum pulsed drain current (IDM)	253 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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