Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
80
100
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA (Figure 8)
V
DS
= Rated BV
DSS,
V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS,
T
C
= 125
o
C
2
-
-
-
-
-
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
-
RFM12N08, RFM12N10
RFP12N08, RFP12N10
-
-
-
-
-
-
-
-
-
-
45
250
85
100
-
-
-
-
-
-
-
4
1
25
±100
0.200
2.4
70
375
130
150
850
300
150
1.67
2.083
V
V
V
µA
µA
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
RFM12N10, EFP12N10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
I
GSS
r
DS(ON)
V
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
V
GS
=
±20V,
V
DS
= 0V
I
D
= 12A, V
GS
= 10V (Figures 6, 7)
I
D
= 12A, V
GS
= 10V
V
DD
= 50V, I
D
= 6A, R
G
= 50Ω,
V
GS
= 10V, R
L
= 8Ω,
(Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage (Note 2)
Reverse Recovery Time
NOTE:
2. Pulse test: Pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 6A
I
SD
= 4A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
150
MAX
1.4
-
UNITS
V
ns
2
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Typical Performance Curves
Unless Otherwise Specified
1.2
POWER DISSIPATION MULTIPLIER
1.0
14
12
I
D
, DRAIN CURRENT (A)
RFM12N08, RFM12N10
10
RFP12N08, RFP12N10
8
6
4
2
0
0.8
0.6
0.4
0.2
0
0
50
100
150
25
50
T
C
, CASE TEMPERATURE (
o
C)
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
T
C
= 25
o
C
I
D
(MAX)
CONTINUOUS
16
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
T
C
= 25
o
C
V
GS
= 9V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
12
10
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
DC
OP
E
V
GS
= 8V
8
V
GS
= 7V
4
V
GS
= 6V
V
GS
= 5V
0
2
4
6
8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
RA
TI
O
N
1
V
DSS
(MAX) 80V
RFM12N08, RFP12N08
V
DSS
(MAX) 100V
RFM12N10, RFP12N10
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
0
0
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
16
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
V
DS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
12
T
C
= -40
o
C
8
T
C
= 125
o
C
4
T
C
= 25
o
C
T
C
= -40
o
C
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
12
T
C
= 25
o
C
T
C
= 125
o
C
0.8
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
0.6
0.4
T
C
= 125
o
C
0.2
T
C
= 25
o
C
T
C
= -40
o
C
0
0
4
8
12
I
D
, DRAIN CURRENT (A)
16
20
0
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
3
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Typical Performance Curves
Unless Otherwise Specified
2.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
GS
= 10V
I
D
= 12A
PULSE DURATION = 80µs
NORMALIZED GATE
THRESHOLD VOLTAGE
(Continued)
1.4
V
GS
= V
DS
I
D
= 250µA
1.5
1.2
1.0
1
0.5
0.8
0
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.6
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1200
1000
C, CAPACITANCE (pF)
800
600
C
ISS
400
200
0
0
C
OSS
C
RSS
10
20
30
40
50
V
DS
, DRAIN TO SOURCE (V)
60
70
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
75
V
DD
= BV
DSS
GATE
SOURCE
VOLTAGE
8
6
50
0.75 BV
DSS
0.50 BV
DSS
25
0.25 BV
DSS
DRAIN SOURCE VOLTAGE
0
I
20
G(REF)
I
G(ACT)
t, TIME (µs)
I
80
G(REF)
I
G(ACT)
0
2
4
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
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