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BZX85-C180/E1

Description
Zener Diode, 180V V(Z), 5%, 1.3W,
CategoryDiscrete semiconductor    diode   
File Size166KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZX85-C180/E1 Overview

Zener Diode, 180V V(Z), 5%, 1.3W,

BZX85-C180/E1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance1200 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1.3 W
Nominal reference voltage180 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance5%
Working test current1.5 mA
BZX85 Series
Vishay Semiconductors
formerly General Semiconductor
Zener Diodes
DO-204AL (DO-41 Glass)
max. .161 (4.1)
min. 1.102 (28.0)
min. 1.102 (28.0)
ge
lta
Vo
ed e
end ang
xt R
E
Features
V
Z
Range
3.6 to 200V
Power Dissipation
1.3W
max.
0.102 (2.6)
Cathode
Mark
• Silicon Planar Power Zener Diodes.
• For use in stabilizing and clipping circuits with high
power rating.
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix “C”
with “B” for ±2% tolerance. Other voltage toler-
ances and other Zener voltages are available
upon request.
Mechanical Data
max.
0.034 (0.86)
Case:
DO-41Glass Case
Weight:
approx. 0.35g
Packaging Codes/Options:
D9/5K per 13” reel (52mm tape), 10K/box
E1/5K per Ammo tape (52mm tape), 10K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
P
tot
R
ΘJA
T
j
T
S
Symbol
(T
A
= 25°C unless otherwise noted)
Value
1.3
(1)
130
(1)
175
–55 to +175
Unit
W
°C/W
°C
°C
Note:
(1) Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Document Number 88323
29-Apr-02
www.vishay.com
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