RFD16N03LSM datasheet, PDF - EEWORLD Datasheet

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RFD16N03LSM: Description16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size102KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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RFD16N03LSM Overview

16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

RFD16N03LSM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	16 A
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	90 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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S E M I C O N D U C T O R

RFD16N03L,

RFD16N03LSM

16A, 30V, Avalanche Rated N-Channel Logic Level

Enhancement-Mode Power MOSFETs

Packaging

JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

December 1995

Features

• 16A, 30V

• r

DS(ON)

= 0.022Ω

•

Temperature Compensating

PSPICE Model

• Can be Driven Directly from CMOS, NMOS,

and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• +175

C Operating Temperature

JEDEC TO-252AA

DRAIN (FLANGE)

Description

The RFD16N03L and RFD16N03LSM are N-channel power

MOSFETs manufactured using the MegaFET process. This

process, which uses feature sizes approaching those of

LSI circuits, gives optimum utilization of silicon, resulting in

outstanding performance. They were designed for use in

applications such as switching regulators, switching convert-

ers, motor drivers and relay drivers. This performance is

accomplished through a special gate oxide design which

provides full rated conductance at gate bias in the 3V - 5V

range, thereby facilitating true on-off power control directly

from logic level (5V) integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER

RFD16N03L

RFD16N03LSM

PACKAGE

TO-251AA

TO-252AA

BRAND

16N03L

GATE

SOURCE

Symbol

DRAIN

GATE

SOURCE

NOTE: When ordering, use the entire part number. Add the sufﬁx

9A, to obtain the TO-252AA variant in tape and reel, e.g.

RFD16N03LSM9A.

Formerly developmental type TA49030.

Absolute Maximum Ratings

= +25

RFD16N03L,

RFD16N03LSM

±10

Refer to Peak Current Curve

Refer to UIS Curve

0.606

-55 to +175

260

UNITS

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation

= +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

STG

, T

Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Harris Corporation 1995

File Number

4013.1

5-31

RFD16N03LSM Related Products

	RFD16N03LSM	RFD16N03	RFD16N03L
Description	16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	16 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it Rohs certified?	incompatible	-	incompatible
Maker	Fairchild	-	Fairchild
package instruction	SMALL OUTLINE, R-PSSO-G2	-	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	-	unknow
ECCN code	EAR99	-	EAR99
Shell connection	DRAIN	-	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V
Maximum drain current (Abs) (ID)	16 A	-	16 A
Maximum drain current (ID)	16 A	-	16 A
Maximum drain-source on-resistance	0.025 Ω	-	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	-	TO-251AA
JESD-30 code	R-PSSO-G2	-	R-PSIP-T3
JESD-609 code	e0	-	e0
Number of components	1	-	1
Number of terminals	2	-	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	175 °C	-	175 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum power dissipation(Abs)	90 W	-	90 W
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	NO
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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