Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
TO-220AB, TO-251AA, TO-252AA
TO-251AA, TO-252AA
TO-220AB
V
GS
= 0V to -20V
V
GS
= 0V to -10V
V
GS
= 0V to -2V
V
DD
= -48V, I
D
= 15A,
R
L
= 3.20Ω
I
G(REF)
= 0.65mA
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±20V
I
D
≈
15A, V
GS
= -10V, (Figure 9)
V
DD
= -30V, I
D
= 7.5A
R
L
= 4.0Ω, V
GS
= -10V
R
G
= 12.5Ω
(Figure 13)
MIN
-60
-2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
16
30
50
20
-
-
-
-
1150
300
56
-
-
-
MAX
-
-4.0
-1
-25
±100
0.150
60
-
-
-
-
100
150
75
3.5
-
-
-
1.875
100
62
UNITS
V
V
µA
µA
nA
W
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
DS
= -25V, V
GS
= 0V
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Notte 2)
Reverse Recovery Time
NOTES:
2. Pulsed: pulse duration
≤
300ms Max, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
SYMBOL
V
SD
t
rr
I
SD
= -15A
I
SD
= -15A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
-1.5
125
UNITS
V
ns
4-104
RFD15P06, RFD15P06SM, RFP15P06
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
-12
Unless Otherwise Specified
-16
0.8
0.6
0.4
-8
-4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC,
NORMALIZED
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
T
J
= MAX RATED
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
-200
V
GS
= -20V
-100
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175
–
T C
I = I 25
-----------------------
-
150
I
D
, DRAIN CURRENT (A)
100µs
-10
1ms
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
10
-5
10
-4
10
-3
10
-2
10
-1
T
C
= 25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-1
-1
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
-100
10
0
10
1
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-105
RFD15P06, RFD15P06SM, RFP15P06
Typical Performance Curves
-50
-40
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
STARTING T
J
= 25
o
C
-10
-30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
Unless Otherwise Specified
(Continued)
-20
V
GS
= -7V
-1
0.1
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
V
GS
= -6V
-10
V
GS
= -4.5V
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -5V
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
-40
-55
o
C
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
25
o
C
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 15A
-32
2.0
-24
175
o
C
-16
1.5
1.0
-8
0.5
0
0
-2
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
-10
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
2.0
I
D
= 250µA
1.5
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
200
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-106
RFD15P06, RFD15P06SM, RFP15P06
Typical Performance Curves
1400
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1200
C, CAPACITANCE (pF)
1000
800
600
C
OSS
400
200
0
0
-5
-10
-15
-20
-25
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
Unless Otherwise Specified
(Continued)
-60
V
DD
= BV
DSS
-45
R
L
= 3.33Ω
I
G(REF)
= 0.65mA
V
GS
= -10V
0.75 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
-7.5
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
-30
-5
-15
-2.5
C
RSS
0
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
京公网安备 11010802033920号
EEWORLD
