LH28F400BGHT-L12 datasheet, PDF

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LH28F400BGHT-L12: DescriptionFlash, 256KX16, 150ns, PDSO48, TSOP-48; Categorystorage storage; File Size33KB，2 Pages; ManufacturerSHARP; Websitehttp://sharp-world.com/products/device/

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LH28F400BGHT-L12 Overview

Flash, 256KX16, 150ns, PDSO48, TSOP-48

LH28F400BGHT-L12 Parametric

Parameter Name	Attribute value
Maker	SHARP
package instruction	TSOP-48
Reach Compliance Code	unknown
Is Samacsys	N
Maximum access time	150 ns
Other features	IT ALSO OPERATES AT MULTIPLE VOLTAGES & ACCESS TIME
JESD-30 code	R-PDSO-G48
JESD-609 code	e6
memory density	4194304 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NOR TYPE
Base Number Matches	1

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RODUCT

NFORMATION

APPLICATIONS:

Pager

Notebook PC

POS

Set Top Box

DVD

Integrated Circuits

Group

LH28F400BG

4M (256K × 16)

SmartVoltage

Flash Memory

FEATURES

• SmartVoltage technology

– 2.7 V, 3.3 V or 5 V V

– 2.7 V, 3.3 V, 5 V or 12 V V

• High-performance access time

– 85 ns (5 V ±025 V), 90 ns (5 V ±0.5 V),

100 ns (3.3 V ±0.3 V), 120 ns (2.7 V – 3.6 V)

– 120 ns (5 V ±0.5 V), 130 ns (3.3 V ±0.3 V),

150 ns (2.7 V – 3.6 V)

• Operating temperature

– Commerical 0°C – +70°C

– Industrial -40°C – +85°C

• Enhanced data protection features

– Absolute protection with V

= GND

– Block erase/word write lockout during power transitions

– Boot blocks protection with

= V

• Optimized array blocking architecture

– Two 4K-word boot blocks

– Six 4K-word parameter blocks

– Seven 32K-word main blocks

– Top or bottom boot locations

• Automated word write and block erase

– Command user interface

– Status register

• Extended cycling capability

– 100,000 block erase cycles

• Enhanced automated suspend options

– word write suspend to read

– block erase suspend to word write

– block erase suspend to read

• Low power management

– deep power-down mode

– automatic power savings mode

– Decreases I

in static mode

• Industry-standard packaging

– 48-pin TSOP

– 44-pin PSOP

• Chip size packaging

– 48-ball CSP

• SRAM-compatible write interface

• ETOX

™

V nonvolatile flash technology

• Not designed or rated as radiation hardened

DESCRIPTION

SHARP’s LH28F400BG Flash memory with SmartVoltage tech-

nology is a high-density, low-cost, nonvolatile, read/write storage

solution for a wide range of applications. LH28F400BG can operate

at V

= 2.7 V and V

= 2.7 V. Its low voltage operation capability

realize battery life and suits for cellular phone application.

Its boot, parameter and main-blocked architecture, flexible voltage

and extended cycling provide for highly flexible component suit-

able for portable terminals and personal computers. Its enhanced

suspend capabilities provide for an ideal solution for code and data

storage applications. For secure code storage appli-cations, such

as networking, where code is either directly executed out of flash

or downloaded to DRAM, the LH28F400BG offers two levels of

protection: absolute protection with V

at GND, selective hardware

boot block locking. These alternatives give designers ultimate

control of their code security needs.

The information for this document is from the LH28F400BG-L85/12 Product Preview, Rev. 0.95.

SMT98015

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