TIM0910-5 datasheet, PDF - EEWORLD Datasheet

TIM0910-5: DescriptionTRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power; CategoryDiscrete semiconductor The transistor; File Size238KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TIM0910-5 Overview

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	HERMETIC SEALED, 2-11D1B, 2 PIN
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	20 weeks
Is Samacsys	N
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (Abs) (ID)	5.7 A
Maximum drain current (ID)	5.7 A
FET technology	JUNCTION
highest frequency band	KU BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	40.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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