August 2009
DUT1507 – 700V, 15A
HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE
General Description
The DUT1507 is a GaAs P-I-N Rectifier. It uses a
patented liquid phase epitaxy (LPE) construction
to provide temperature performance above current
Silicon, Silicon Carbide and Gallium Nitride
products of a similar specification. The device is
able to function stably well above the maximum T
J
of more traditional diodes of this type while
maintaining parity of performance in terms of key
parameters such as recovery time and forward
voltage.
Preliminary
Features
High maximum junction temperature; up to
+260° vs. +175° for silicon diodes
C
C
Lower and
temperature independent
dynamic recovery characteristics over the
full specified temperature range
Lower leakage current at all operating
temperatures
Very low capacitance
Package Types
Applications
High temperature electronics
Power Modules
Hybrid circuits
TO-257
TO-276AB (SMD)
BARE DIE
Thermal Characteristics
SYMBOL
PARAMETER
PACKAGE
RATINGS
UNITS
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276Al
3.51
°
C/W
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-257AlN
1.45
°
C/W
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276AB
1.24
°
C/W
TO-257Al / TO-257AlN
TO-276AB
BARE DIE (3.1mm²)
1
1
ORDERING
PART #
PACKAGE
TEMP RANGE
1 2 3
1.
2.
3.
2
3
1.
2.
CATHODE
ANODE
(DIE BACKSIDE)
DUT1507AL
DUT1507ALN
DUT1507S
DUT1507-AG
DUT1507-GG
TO-257Al
TO-257AlN
TO-276AB
BARE DIE
BARE DIE
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
ANODE
COMMON CATHODE
COMMON CATHODE
1
2
3
CATHODE
ANODE
CATHODE
Europe:
sales@mintech.co.uk
USA :
ussales@mintech.co.uk
China:
chinasales@mintech.co.uk
Rev. 1.4 7
th
August 2009
1
© Mintech Semiconductors Ltd
www.mintech.co.uk
Absolute Maximum Ratings
SYMBOL
PARAMETER
RATINGS
UNITS
V
RRM
PEAK REPETETIVE REVERSE VOLTAGE
700
V
V
RWM
V
R
I
F(AV)
I
FSM
T
J
,T
STG
WORKING PEAK REPETETIVE REVERSE VOLTAGE
700
V
DC BLOCKING VOLTAGE
700
V
AVERAGE RECTIFIED FORWARD CURRENT @ 260°
C
15
A
NON-REPETETIVE PEAK SURGE CURRENT
60Hz SINGLE HALF-SINE WAVE
OPERATING AND STORAGE TEMPERATURE RANGE
150
A
-65 to +260
°
C
Electrical Characteristics
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
V
FM
1
I
F
=15A
T
C
= 25°
C
T
C
= 175°
C
T
C
= 260°
C
T
C
= 25°
C
C
T
C
= 175°
T
C
= 260°
C
T
C
= 25°
C
T
C
= 175°
C
T
C
= 260°
C
-
-
-
1.8
2.1
2.3
1.9
2.2
2.5
V
I
RM
1
V
R
=700V
-
-
-
0.40
125
1000
1
130
1100
µA
t
RR
I
F
=1A, di/dt = 200 A/µs, V
R
=30V
-
-
-
30
30
30
35
35
35
ns
t
RR
I
RR
Q
RR
I
F
=15A, di/dt = 200 A/µs, V
R
=200V
T
C
= 25°
C
-
-
-
65
9
300
75
10
370
ns
A
nC
t
RR
I
RR
Q
RR
t
RR
I
RR
Q
RR
I
F
=15A, di/dt = 200 A/µA, V
R
=200V
T
C
= 175°
C
-
-
-
65
9
300
75
10
370
ns
A
nC
I
F
=15A, di/dt = 200 A/µA, V
R
=200V
T
C
= 260°
C
-
-
-
65
9
300
75
10
370
ns
A
nC
C
J
C,
T
J
= 25° f = 1MHz, V
R
= 200V
-
-
18
22
pF
W
AVL
AVALANCHE ENERGY ( L=2Mh )
-
10
-
-
mJ
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Rev. 1.4 7
th
August 2009
2
© Mintech Semiconductors Ltd
www.mintech.co.uk
Typical Performance Characteristics
260°
C
25°
C
175°
C
260°
C
175°
C
25°
C
25°
C
TBA – IRR
VS DI/DT
Rev. 1.4 7
th
August 2009
3
© Mintech Semiconductors Ltd
www.mintech.co.uk
Mechanical Dimensions
TO-257
Note:
All dimensions in millimetres
Pins must not be bent less than
4.0mm from case
Finish – Electroless Ni 3-5 µm thick
TO-276AB(SMD)
Note:
All dimensions in millimeters [inches]
Rev. 1.4 7
th
August 2009
4
© Mintech Semiconductors Ltd
www.mintech.co.uk
Mechanical Dimensions
Bare Die
PASSIVATION
CATHODE
CATHODE
EPITAXIAL P-I-N LAYER
ANODE
p+ SUBSTRATE
3.1mm
2.6mm
METALISATION
R = 0.3mm
2.6mm
3.1mm
CATHODE
DIMENSIONS
3.1mm x 3.1mm
THICKNESS
400µm ± 20µm
Note: For custom thicknesses please contact us
TOP METAL
BACK METAL
DUT1507-AG
DUT1507-GG
Al OR Au (See order code below)
Au
Al TOPSIDE Au BACKSIDE
Au TOPSIDE Au BACKSIDE
Waffle Pack Dimensions
Note: For other supply formats please contact us
A
X
POCKET DETAILS
X = 3.20mm ±0.05mm pocket size
Y = 3.20mm ±0.05mm pocket size
Z = 1.19mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 10 X 10 (100)
OVERALL TRAY SIZE
Y
Z
X
Size = 50.80mm ±0.10mm
Height = 3.96mm +0.05mm -0.08mm
Flatness = 0.10mm
Rev. 1.4 7
th
August 2009
5
© Mintech Semiconductors Ltd
www.mintech.co.uk
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