HOA1180
Reflective Sensor
FEATURES
•
Choice of phototransistor or photodarlington
output
•
High sensitivity
•
Wide operating temperature range
(- 55¡C to +100¡C)
•
12.0 in.(305 mm) min. 28 AWG PVC insulated
wire leads
INFRA-24.TIF
DESCRIPTION
The HOA1180 series consists of an infrared emitting
diode and an NPN silicon phototransistor
(HOA1180- 001, - 002) or photodarlington
(HOA1180- 003), encased side- by- side on converging
optical axes in a black thermoplastic housing. The
detector responds to radiation from the IRED only when
a reflective object passes within its field of view. The
HOA1180 series employs metal can packaged
components. For additional component information see
SE1450, SD1440, and SD1410.
Housing material is polyester. Housings are soluble in
chlorinated hydrocarbons and ketones. Recommended
cleaning agents are methanol and isopropanol.
Wire color code and functions are:
All devices
IRED anode - Red
IRED cathode - Black
HOA1180-001
Collector - Brown
Emitter - Black
HOA1180-002
Collector - Orange
Emitter - Black
HOA1180-003
Collector - Yellow
Emitter - Black
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.010(0.25)
2 plc decimals
±0.020(0.51)
.250(6.35)
.070(1.78)
.625(15.88)
.450(11.43)
12.0(304.8)
MIN
.50(12.7)
TEST
SURFACE
.250(6.35
.062(1.60)R
2 PLCS
.040(1.02)
.187(4.75)
.150(3.81)
DIM_035.ds4
236
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
HOA1180
Reflective Sensor
ELECTRICAL CHARACTERISTICS
PARAMETER
IR EMITTER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
DETECTOR
COUPLED CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (5 sec)
IR EMITTER
Power Dissipation
Reverse Voltage
Continuous Forward Current
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Collector DC Current
-55¡C to 100¡C
-55¡C to 125¡C
240¡C
75 mW [À]
3V
50 mA
TRANS.
30 V
5V
75 mW [À]
30 mA
SCHEMATIC
DARLINGTON
15 V
5V
75 mW [À]
30 mA
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
237
HOA1180
Reflective Sensor
Fig. 1
IRED Forward Bias Characteristics
gra_073.ds4
Fig. 2
Non-Saturated Switching Time vs
Load Resistance
1000
gra_079.ds4
100
90
80
70
60
50
40
30
20
10
0
0.8
Forward current - mA
Response time - µs
Pulsed
condition
T
A
= 80°C
T
A
= 25°C
T
A
= -40°C
1.0
1.2
1.4
1.6
1.8
2.0
100
Photodarlington
10
Phototransistor
1
10
100
1000
10000
Forward voltage - V
Fig. 3
Dark Current vs
Temperature
Fig. 4
gra_303.cdr
Load resistance - Ohms
Collector Current vs
Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
gra_076.ds4
Normalized collector current
Free-air temperature - °C
Fig. 5
Collector Current vs
Distance to Reflective Surface
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.00
0.10
Fig. 6
gra_084.ds4
Collector Current vs
IRED Forward Current
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
10
20
30
40
gra_085.ds4
Normalized collector current
Normalized collector current
I
F
= 30 mA
V
CE
= 5.0 V
V
CE
= 5 V
d = 0.5 in.
0.20
0.30
0.40
0.50
0.60
50
Distance to reflective surface - inches
All Performance Curves Show Typical Values
IRED forward current - mA•
238
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
HOA1180
Reflective Sensor
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
239
Parametric
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Embedded System
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