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UPA869TD-T3FB

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEADLESS MINIMOLD, M16, 1208, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size66KB,6 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

UPA869TD-T3FB Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEADLESS MINIMOLD, M16, 1208, 6 PIN

UPA869TD-T3FB Parametric

Parameter NameAttribute value
package instructionLEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage5 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandL BAND
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsSILICON GERMANIUM
Nominal transition frequency (fT)6500 MHz
Base Number Matches1
PRELIMINARY DATA SHEET
NPN SILICON + SiGe RF TWIN TRANSISTOR
µ
PA869TD
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• 2 different built-in transistors (NESG2046M33, 2SC5800)
Q1: High gain SiGe transistor
f
T
= 18 GHz TYP.,
S
21e
2
= 13 dB TYP. @ V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
Q2: Low phase distortion transistor suited for OSC applications
f
T
= 6.5 GHz TYP.,
S
21e
2
= 5.5 dB TYP. @ V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
• 6-pin lead-less minimold (M16, 1208 package)
BUILT-IN TRANSISTORS
Q1
3-pin super lead-less minimold part No.
3-pin thin-type ultra super minimold part No.
NESG2046M33
Q2
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Supplying Form
µ
PA869TD
µ
PA869TD-T3
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10460EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2004

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