RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | SUMITOMO |
| package instruction | FLANGE MOUNT, R-CDFM-F2 |
| Contacts | 2 |
| Manufacturer packaging code | CASE IB |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH RELIABILITY |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 15 V |
| Maximum drain current (ID) | 2.6 A |
| FET technology | JUNCTION |
| highest frequency band | C BAND |
| JESD-30 code | R-CDFM-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | DEPLETION MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
京公网安备 11010802033920号
EEWORLD
