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K4S281632B-TL750

Description
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Categorystorage    storage   
File Size108KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4S281632B-TL750 Overview

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

K4S281632B-TL750 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts54
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G54
length22.22 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals54
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Aug. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
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