IDT7200S30LB8 datasheet, PDF - EEWORLD Datasheet

IDT7200S30LB8: DescriptionFIFO, 256X9, 30ns, Asynchronous, CMOS, CQCC32, LCC-32; Categorystorage storage; File Size440KB，13 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7200S30LB8 Overview

FIFO, 256X9, 30ns, Asynchronous, CMOS, CQCC32, LCC-32

Parameter Name	Attribute value
Maker	IDT (Integrated Device Technology)
Parts packaging code	QFJ
package instruction	QCCN,
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	30 ns
Other features	RETRANSMIT
period time	40 ns
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
memory density	2304 bit
memory width	9
Number of functions	1
Number of terminals	32
word count	256 words
character code	256
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256X9
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	QUAD

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