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D358S10

Description
Rectifier Diode, 1 Phase, 1 Element, 465A, 1000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size62KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

D358S10 Overview

Rectifier Diode, 1 Phase, 1 Element, 465A, 1000V V(RRM), Silicon,

D358S10 Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 358 S 06...10
T
vj
= - 25°C...T
vj max
S
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
T
C
=100°C
T
C
=77°C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 1 ms
T
vj
= T
vj max
, tp = 1 ms
V
RRM
600
800
1000
700
900
1100
730
358
465
6300
5200
12880
10630
198450
135200
82950
56500
V
V
V
V
V
V
A
A
A
A
A
A
A
A²s
A²s
A²s
A²s
T
vj
= + 25°C...T
vj max
V
RSM
I
FRMSM
I
FAVM
I
FSM
Grenzlastintegral
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
T
vj
= 25°C, tp = 1ms
I²t
I²t-value
T
vj
= T
vj max
, tp = 1ms
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Typischer Wert der Durchlaßverzögerungsspannung
typical value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovered time
Sanftheit
Softness
T
vj
= T
vj max
, i
F
= 1400 A
v
F
V
(TO)
r
T
V
FRM
max.
2,26
1,05
0,8
V
V
mΩ
V
1)
T
vj
= T
vj max
T
vj
= T
vj max
IEC 747-2
T
vj
= T
vj max
di
F
/dt=50A/µs, v
R
=0V
IEC 747-2, Methode / method II
T
vj
= T
vj max,
i
FM
=1400A
di
F
/dt=50 A/µs, v
R
=0V
T
vj
= 25°C,
v
R
=V
RRM
typ
3,1
t
fr
typ
3,8
µs
1)
i
R
I
RM
T
vj
= T
vj max
, v
R
= V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=465A,-di
F
/dt=50A/µs
v
R
=100V, v
RM<
=200 V
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=465 A,-di
F
/dt=50A/µs
v
R
=100V, v
RM<
=200 V
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=465A,-di
F
/dt=50A/µs
v
R
=100 V; v
RM<
=200V
T
vj
= T
vj max
i
FM
=A,-di
F
/dt=A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
max.
max.
10
100
52
mA
mA
A
1)
Q
r
90
µAs
1)
t
rr
1,8
µs
1)
SR
µs/A
2)
1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standard value)
2) Richtwert für untere Streubereichsgrenze / Lower limit of scatter range (standard value)
SZ-M / 09.02.87
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