BCX51/ 52/ 53
PNP MEDIUM POWER TRANSISTORS IN SOT89
Features
I
C
= -1A Continuous Collector Currnet
Low Saturation Voltage V
CE(sat)
< -500mV @ -0.5A
Gain groups 10 and 16
Epitaxial Planar Die Construction
Complementary NPN types: BCX54, 55, and 56
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Leads, Solderable per MIL-STD-202
Method 208
e3
Weight: 0.052 grams (Approximate)
Applications
SOT89
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
BCX51TA
BCX51-13R
BCX5110TA
BCX5116TA
BCX52TA
BCX5210TA
BCX5216TA
BCX53TA
BCX5310TA
BCX5316TA
BCX5316TC
BCX5316-13R
Notes:
Marking
AA
AA
AC
AD
AE
AG
AM
AH
AK
AL
AL
AL
Reel Size (inches)
7
13
7
7
7
7
7
7
7
7
13
13
Tape Width (mm)
12
12
12
12
12
12
12
12
12
12
12
12
Quantity per Reel
1,000
4,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
4,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
xx = Product Type Marking Code, as follows:
xx
BCX51 = AA
BCX5110 = AC
BCX5116 = AD
BCX52 = AE
BCX5210 = AG
BCX5316 = AM
BCX53 = AH
BCX5310 = AK
BCX5316 = AL
BCX51/ 52/ 53
Datasheet Number: DS35368 Rev. 3 - 2
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© Diodes Incorporated
BCX51/ 52/ 53
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
BCX51
-45
-45
BCX52
-60
-60
-5
-1
-1.5
-100
-200
BCX53
-100
-80
Unit
V
V
V
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1
124
10.0
-65 to +150
Unit
W
°C/W
°C/W
°C
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
Max Power Dissipation (W)
120
100
80
60
40
20
0
100µ
25mm x 25mm 1oz Cu
T
amb
=
25°C
100
25mm x 25mm 1oz Cu
T
amb
=
25°C
Single pulse
D=0.5
10
D=0.2
D=0.1
Single Pulse
D=0.05
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
25mm x 25mm 1oz Cu
Pulse Width (s)
Pulse Power Dissipation
Temperature (°C)
Derating Curve
BCX51/ 52/ 53
Datasheet Number: DS35368 Rev. 3 - 2
2 of 6
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BCX51/ 52/ 53
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio
(Note 7)
All versions
h
FE
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
Symbol
BV
CBO
Min
-45
-60
-100
-45
-60
-80
-5
—
—
25
40
25
63
100
—
—
150
—
Typ
—
Max
—
Unit
V
Test Condition
I
C
= -100µA
BV
CEO
BV
EBO
I
CBO
I
EBO
—
—
—
—
—
—
—
—
—
-0.1
-20
-20
—
V
V
µ
A
I
C
= -10mA
I
E
= -10µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
EB
= -5V
I
C
= -5mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, V
CE
= -2V
I
C
= -50mA, V
CE
= -10V
f = 100MHz
V
CB
= -10V, f = 1MHz
nA
250
—
—
10 gain grp
16 gain grp
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Transition Frequency
Output Capacitance
Note:
V
CE(sat)
V
BE(on)
f
T
C
obo
—
—
—
—
—
—
160
250
-0.5
-1.0
-
25
V
V
MHz
pF
7. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
1.0
I
B
= 10mA
500
V
CE
= -5V
I
C
, COLLECTOR CURRENT (A)
0.8
I
B
= 8mA
400
h
FE
, DC CURRENT GAIN
I
B
= 6mA
T
A
= 150°C
0.6
I
B
= 4mA
300
T
A
= 85°C
0.4
I
B
= 2mA
200
T
A
= 25°C
0.2
100
T
A
= -55°C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
BCX51/ 52/ 53
Datasheet Number: DS35368 Rev. 3 - 2
3 of 6
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BCX51/ 52/ 53
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.5
1.0
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
0.8
T
A
= -55°C
0.3
T
A
= 150°C
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.4
0.2
T
A
= 85°C
0.2
V
CE
= -2V
0.1
T
A
= 25°C
T
A
= -55°C
0
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
300
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
250
1.0
0.8
T
A
= -55°C
200
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
150
0.4
100
V
CE
= -5V
f = 100MHz
0.2
I
C
/ I
B
= 10
50
0
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
20
40
60
80
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
0
160
140
120
CAPACITANCE(pF)
100
80
C
ibo
f = 1MHz
60
40
20
C
obo
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCX51/ 52/ 53
Datasheet Number: DS35368 Rev. 3 - 2
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May 2013
© Diodes Incorporated
BCX51/ 52/ 53
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D1
00
0.2
R
1
C
H
E
H
B1
B
e
8° (4X)
L
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.44
D
4.40
4.60
D1
1.62
1.83
E
2.29
2.60
e
1.50 Typ
H
3.94
4.25
H1
2.63
2.93
L
0.89
1.20
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
X2 (2x)
Y3
Y
Y2
C
X (3x)
Y1
Y4
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
BCX51/ 52/ 53
Datasheet Number: DS35368 Rev. 3 - 2
5 of 6
www.diodes.com
May 2013
© Diodes Incorporated
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