1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Max
1N/FDLL 914/A/B / 4148 / 4448
500
300
Units
mW
°C/W
2002
Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
1N916B
1N914B/4448
Test Conditions
I
R
= 100
µA
I
R
= 5.0
µA
I
F
= 5.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 20 V, T
A
= 150°C
V
R
= 75 V
V
R
= 0, f = 1.0 MHz
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V (60mA),
I
rr
= 1.0 mA, R
L
= 100Ω
Min
100
75
620
630
Max
Units
V
V
mV
mV
V
V
V
V
nA
µA
µA
pF
pF
ns
I
R
Reverse Current
720
730
1.0
1.0
1.0
1.0
25
50
5.0
2.0
4.0
4.0
C
T
Total Capacitance
1N916A/B/4448
1N914A/B/4148
Reverse Recovery Time
t
rr
Typical Characteristics
160
Ta=25 C
o
120
T a= 25 C
o
Reverse Voltage, V
R
[V]
150
Reverse Current, I
R
[nA]
100
80
140
60
130
40
120
20
110
1
2
3
5
10
20
30
50
100
0
10
R everse V oltage, V
R
[V]
20
30
50
70
100
Reverse Current, I
R
[uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
550
750
Ta= 25 C
o
Ta= 25 C
o
Forward Voltage, V
R
[mV]
450
Forward Voltage, V [mV]
F
500
700
650
400
600
350
550
300
500
250
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I
F
[uA]
Forward Current, I
F
[m A]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Typical Characteristics
(continued)
1.6
900
Ta= 25 C
o
Forward Voltage, V
F
[mV]
800
Typical
Ta= -40 C
o
Forward Voltage, V
F
[mV]
1.4
700
1.2
600
Ta= 25 C
o
1.0
500
Ta= +65 C
o
400
0.8
300
0.6
10
20
30
50
100
200
300
500
800
0.01
0.03
0.1
0.3
1
3
10
Forward Current, I
F
[mA]
Forward Current, I
F
[mA]
Figure 5. Forward Voltage vs Forward Current
VF - 10 to 800 mA
Figure 6. Forward Voltage
vs Ambient Temperature
VF - 0.01 - 20 mA (-40 to +65 Deg C)
4.0
0.90
Reverse Recovery Time, t
rr
[ns]
T
A
= 25 C
o
Ta = 25 C
o
3.5
Total Capacitance (pF)
0.85
3.0
2.5
0.80
2.0
1.5
0.75
0
2
4
6
8
10
12
14
1.0
10
20
30
40
50
60
REVERSE VOLTAGE (V)
Reverse Recovery Current, I
rr
[mA]
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
500
500
400
Power Dissipation, P [mW]
D
400
DO-35
Current (mA)
300
300
200
I
F(A
V)
- A VE
R AG
SOT-23
E RE
CT
200
IF IE D
C UR
RE N
100
T-m
A
100
0
0
50
100
o
150
0
0
50
100
150
o
200
Ambient Temperature ( C)
Temperature [ C]
Figure 9. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
Figure 10. Power Derating Curve
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