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1SS417(TL3,T)

Description
Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size131KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1SS417(TL3,T) Overview

Rectifier Diode, Schottky, 1 Element, 0.1A, 45V V(RRM), Silicon

1SS417(TL3,T) Parametric

Parameter NameAttribute value
package instructionR-PDSO-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.1 W
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
1SS417
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS417
High Speed Switching Application
0.6±0.05
Unit: mm
A
0.1
Low forward voltage: V
F (3)
= 0.56V (typ.)
Low reverse current: I
R
= 5μA (Max.)
CATHODE MARK
Small package
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P*
T
j
T
stg
Rating
45
40
200
100
1
100
125
−55~125
Unit
V
V
mA
mA
A
mW
°C
°C
0.07 M A
0.1
0.2
±0.05
0.8±0.05
0.1±0.05
0.48
-0.03
+0.02
fSC
JEDEC
JEITA
Operating temperature range
T
opr
−40~100
°C
TOSHIBA
1-1L1A
Weight: 0.6mg(typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 50mA
V
R
= 40V
V
R
= 0, f = 1MH
z
Min
Typ.
0.28
0.36
0.56
15
Max
0.62
5
μA
pF
V
Unit
Equivalent Circuit
(Top View)
Marking
X
1
2007-11-01
1.0±0.05

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