DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
Product specification
2001 Jan 18
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
FEATURES
•
Low forward voltage
•
Very small SMD plastic package
•
Low diode capacitance.
APPLICATIONS
•
UHF mixers
•
Sampling circuits
•
Modulators
•
Phase detectors.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 (SC-70)
very small plastic SMD package.
Single diodes and double diodes with
different pinning are available. ESD
sensitive device, observe handling
precautions.
MARKING
TYPE NUMBER
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
MARKING
CODE
88
87
85
86
PINNING
PIN
1PS70SB82
1
2
3
1PS70SB84
1
2
3
1PS70SB85
1
2
3
1PS70SB86
1
2
3
k
1
k
2
a
1
and a
2
3
1
2
MLC359
SYMBOL
1
3
2
n.c.
MLC357
a
n.c.
k
Fig.2
1PS70SB82 single
diode configuration
(symbol).
a
1
k
2
k
1
and a
2
a
1
a
2
k
1
and k
2
Fig.3
1PS70SB84 diode
configuration (symbol).
1
3
2
MLC358
handbook, 2 columns
3
Fig.4
1PS70SB85 diode
configuration (symbol).
1
Top view
2
MBC870
3
1
2
MLC360
Fig.1
Simplified outline
(SOT323; SC-70) and
pin configuration.
Fig.5
1PS70SB86 diode
configuration (symbol).
2001 Jan 18
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
MIN.
−
−
−65
−
MAX.
UNIT
15
30
+150
125
V
mA
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.6
I
F
= 1 mA
I
F
= 30 mA
r
D
I
R
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
differential diode forward resistance
continuous reverse current
diode capacitance
f = 1 MHz; I
F
= 5 mA; see Fig.9
V
R
= 1 V; note 1; see Fig.7
V
R
= 0; f = 1 MHz; see Fig.8
−
−
12
−
1
340
700
−
0.2
−
mV
mV
Ω
µA
pF
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
UNIT
K/W
2001 Jan 18
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
handbook, halfpage
10
3
MGT835
10
3
handbook, halfpage
IR
(µA)
MGT836
IF
(mA)
(1)
(2) (3)
10
2
10
2
10
(1)
1
10
10
−1
(2)
(1)
(3)
(2)
(3)
1
0
0.4
0.8
1.2
VF (V)
1.6
10
−2
0
5
10
VR (V)
15
(1) T
amb
= 125
°C
.
(2) T
amb
= 85
°C
.
(3) T
amb
= 25
°C
.
(1) T
amb
= 125
°C
.
(2) T
amb
= 85
°C
.
(3) T
amb
= 25
°C
.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGT837
10
3
handbook, halfpage
rD
(Ω)
10
2
MGT838
Cd
(pF)
0.8
0.6
10
0.4
0
2
4
6
8
VR (V)
10
1
10
−1
1
10
IF (mA)
10
2
f = 1 MHz; T
amb
= 25
°C
.
f = 1 MHz; T
amb
= 25
°C
.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9
Differential diode forward resistance as a
function of forward current; typical values.
2001 Jan 18
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2001 Jan 18
5
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