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Datasheet> All Categories > Wireless rf/communication> Telecom circuit> UPC8112TB-E3
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UPC8112TB-E3

Description
RF and Baseband Circuit, Bipolar, PDSO6, PLASTIC, SMT-6
CategoryWireless rf/communication    Telecom circuit   
File Size134KB，20 Pages
ManufacturerNEC Electronics
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UPC8112TB-E3 Overview

RF and Baseband Circuit, Bipolar, PDSO6, PLASTIC, SMT-6

UPC8112TB-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOIC
package instructionTSSOP,
Contacts6
Reach Compliance Codecompliant
Is SamacsysN
JESD-30 codeR-PDSO-G6
JESD-609 codee0
length2 mm
Number of functions1
Number of terminals6
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)235
Certification statusNot Qualified
Maximum seat height1.1 mm
Nominal supply voltage3 V
surface mountYES
technologyBIPOLAR
Telecom integrated circuit typesRF AND BASEBAND CIRCUIT
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature10
width1.25 mm
Base Number Matches1

UPC8112TB-E3 Preview

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC8112TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
DESCRIPTION
The
µ
PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for
cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The
µ
PC8112TB features
high impedance output of open collector. Similar ICs of the
µ
PC2757TB and
µ
PC2758TB feature low impedance
output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to
reduce your system size.
The
µ
PC8112TB is manufactured using NEC’s 20 GHz f
T
NESAT™III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Excellent RF performance
•
•
•
•
•
•
: IIP
3
= –7 dBm@f
RFin
= 1.9 GHz (reference)
IM
3
= –88 dBc@P
RFin
= –38 dBm, 1.9 GHz (reference)
Similar conversion gain to
µ
PC2757 and lower noise figure than
µ
PC2758
Minimized carrier leakage
: RF
Io
= –80 dB@f
RFin
= 900 MHz (reference)
RF
Io
= –55 dB@f
RFin
= 1.9 GHz (reference)
High linearity
: P
O (sat)
= –2.5 dBm TYP.@f
RFin
= 900 MHz
P
O (sat)
= –3 dBm TYP.@f
RFin
= 1.9 GHz
Low current consumption
: I
CC
= 8.5 mA TYP.
Supply voltage
: V
CC
= 2.7 to 3.3 V
High-density surface mounting : 6-pin super minimold package
APPLICATIONS
• 1.5 GHz to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
• 800 MHz to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number
Package
6-pin super minimold
Markings
C2K
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel.
µ
PC8112TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µ
PC8112TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12808EJ2V0DS00 (2nd edition)
Date Published June 2000 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2000
µ
PC8112TB
PIN CONNECTIONS
Pin No.
(Top View)
(Bottom View)
4
5
6
4
5
6
3
2
Pin Name
RFinput
GND
LOinput
PS
V
CC
IFoutput
1
2
3
4
1
3
2
1
C2K
5
6
PRODUCT LIN-UP (T
A
= +25°C, V
CC
= 3.0 V, Z
S
= Z
L
= 50
Ω
)
Items
Part
Number
No RF
I
CC
(mA)
5.6
900 MHz 1.5 GHz 1.9 GHz 900 MHz
CG
SSB · NF SSB · NF SSB · NF
(dB)
(dB)
(dB)
(dB)
10
10
13
15
1.5 GHz
CG
(dB)
15
1.9 GHz
CG
(dB)
13
900 MHz
IIP
3
(dBm)
−14
1.5 GHz
IIP
3
(dBm)
−14
1.9 GHz
IIP
3
(dBm)
−12
µ
PC2757T
µ
PC2757TB
µ
PC2758T
µ
PC2758TB
µ
PC8112T
µ
PC8112TB
11
9
10
13
19
18
17
−13
−12
−11
8.5
9
11
11
15
13
13
−10
−9
−7
Items
Part
Number
900 MHz
P
O(sat)
(dBm)
−3
1.5 GHz
P
O(sat)
(dBm)
−
1.9 GHz
P
O(sat)
(dBm)
−8
900 MHz
RF
LO
(dB)
–
1.5 GHz
RF
LO
(dB)
–
1.9 GHz
RF
LO
(dB)
–
IF Output
Configuration
Emitter follower
Package
µ
PC2757T
µ
PC2757TB
µ
PC2758T
µ
PC2758TB
µ
PC8112T
µ
PC8112TB
6-pin minimold
6-pin super minimold
+1
−
−4
–
–
–
6-pin minimold
6-pin super minimold
−2.5
−3
−3
−80
−57
−55
Open collector
6-pin minimold
6-pin super minimold
Remark
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Caution 1.
The
µ
PC2757 and
µ
PC2758’s IIP
3
are calculated with
∆
IM
3
= 3 which is the same IM
3
inclination as
µ
PC8112. On the other hand, OIP
3
of Standard characterisitcs in page 6 is cross point IP.
2.
This document is to be specified for
µ
PC8112TB.
The other part number mentioned in this
document should be referred to the data sheet of each part number.
2
Data Sheet P12808EJ2V0DS00
µ
PC8112TB
INTERNAL BLOCK DIAGRAM
RFinput
IFoutput
LOinput
µ
PC8112TB LOCATION EXAMPLE IN THE SYSTEM
Digital cordless phone
Low noise Tr.
RX
µ
PC8112TB
DEMOD.
I
Q
SW
VCO
÷N
PLL
PLL
0˚
TX
PA
I
φ
90˚
Q
Data Sheet P12808EJ2V0DS00
3
µ
PC8112TB
PIN EXPLANATION
Applied
Voltage
(V)
−
Pin
No.
1
Pin
Name
RFinput
Pin Voltage
(V)
1.2
Function and Application
Internal Equivalent Circuit
RF input pin of mixer. This
mixer is designed as double
balanced type.
This pin should be externally
coupled to front stage with DC cut
capacitor.
Ground pin. This pin must be
connected to the system ground.
Form the ground pattern as wide
as possible and the truck length
as short as possible to minimize
ground impedance.
Supply voltage pin.
This pin should be connected with
bypass capacitor (example: 1 000
pf) to minimize ground
impedance.
IF output pin. This output is
configured with open collector of
high impedance. This pin should
be externally equipped with
matching circuit of inductor should
be selected as small resistance
and high frequency use.
Input pin of local amplifier. This
amplifier is designed as differen-
tial type.
This pin should be externally
coupled to local signal source
with DC cut capacitor.
Recommendable input level is
−15
to 0 dBm.
5
2
GND
0
−
6
From
LO
1
5
V
CC
2.7 to 3.3
−
2
6
IFoutput
as same as
V
CC
voltage
through
external
inductor
−
3
LOinput
−
1.4
5
To mixer
3
2
4
PS
V
CC
or
GND
−
Power save control pin. This pin
can control ON/OFF operation
with bias as follows;
Bias: V
V
PS
≥
2.5
0 to 0.5
Operation
ON
OFF
5
4
2
4
Data Sheet P12808EJ2V0DS00
µ
PC8112TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Total Circuit Current
Total Power Dissipation
Symbol
V
CC
I
CC
P
D
Conditions
T
A
= +25°C, 5 pin and 6 pin
T
A
= +25°C
Mounted on double sided copper clad 50
×
50
×
1.6 mm epoxy glass PWB (T
A
=
+85°C)
Ratings
3.6
77.7
200
−40
to
+85
−55
to
+150
Unit
V
mA
mW
°C
°C
Operating Ambient Temperature
Storage Temperature
T
A
T
stg
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
V
CC
MIN.
2.7
−40
−15
0.8
100
TYP.
3.0
+25
−10
1.9
250
MAX.
3.3
+85
0
2.0
300
Unit
V
°C
dBm
GHz
MHz
With external matching
Zs = 50
Ω
Remark
5 pin and 6 pin should be applied
to same voltage.
Operating Ambient Temperature
LO Input Level
RF Input Frequency
IF Output Frequency
T
A
P
LOin
f
RFin
f
IFout
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T
A
=
+
25°C, V
CC
= V
PS
= V
IFout
= 3.0 V,
°
P
LOin
=
−
10 dBm, Z
S
= Z
L
= 50
Ω
)
Parameter
Circuit Current
Circuit Current at Power Save
Mode
Conversion Gain
Symbol
I
CC
I
CC(PS)
No signals
V
CC
= 3.0 V, V
PS
= 0.5 V
Test Conditions
MIN.
4.9
−
TYP.
8.5
−
MAX.
11.7
0.1
Unit
mA
µ
A
dB
CG
f
RFin
= 900 MHz, f
LOin
= 1 000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
f
RFin
= 900 MHz, f
LOin
= 1 000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
f
RFin
= 900 MHz, f
LOin
= 1 000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
(P
RFin
=
−10
dBm each)
11.5
9.5
−
−
−6.5
−7
15
13
9.0
11.2
−2.5
−3
17.5
15.5
11
13.2
−
−
Single Side Band Noise Figure
SSB
•
NF
dB
Saturated Output Power
Po
(sat)
dBm
Data Sheet P12808EJ2V0DS00
5
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