CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
TO-220, and TO-263
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 48V,
I
D
= 45A,
R
L
= 1.07Ω
(Figures 20, 21)
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V (Figure 13)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±10V
I
D
= 45A, V
GS
= 5V (Figure 11)
V
DD
= 30V, I
D
= 45A, R
L
= 0.67Ω,
V
GS
= 5V, R
GS
= 2.5Ω
(Figures 10, 18, 19)
MIN
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
20
150
55
90
-
107
58
2.4
2150
640
240
-
-
MAX
-
3
1
250
10
0.028
215
-
-
-
-
185
135
75
3.0
-
-
-
1.05
80
UNITS
V
V
µA
µA
µA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 14)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
≤
80µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
SYMBOL
V
SD
t
rr
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
155
UNITS
V
ns
2
RFP45N06LE, RF1S45N06LESM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
50
1.0
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
Z
θ
JC
, NORMALIZED
THERMAL IMPEDANCE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
I
DM
, PEAK CURRENT CAPABILITY (A)
T
C
= 25
o
C
T
J
= MAX RATED
500
V
GS
= 10V
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
100
100µs
V
GS
= 5V
100
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
10
10
-5
175 - T
C
150
10
0
10
1
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
RFP45N06LE, RF1S45N06LESM
Typical Performance Curves
200
I
AS
, AVALANCHE CURRENT (A)
100
I
D
, DRAIN CURRENT (A)
80
Unless Otherwise Specified
(Continued)
100
V
GS
= 10V
V
GS
= 5V
V
GS
= 4V
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 3.5V
40
V
GS
= 3V
20
V
GS
= 2.5V
0
1
0.01
0
1.5
3.0
4.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6.0
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
100
V
DD
= 15V
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-55
o
C
25
o
C
r
DS(ON)
, DRAIN TO SOURCE
80
I
D
= 45A
ON RESISTANCE (mΩ)
60
I
D
= 11.25A
40
I
D
= 22.5A
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
D
= 90A
175
o
C
60
40
20
0
0
1.5
3.0
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
600
V
DD
= 30V, I
D
= 45A, R
L
= 0.67Ω
500
SWITCHING TIME (ns)
t
d(OFF)
400
t
f
300
200
100
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
t
d(ON)
NORMALIZED ON RESISTANCE
t
r
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 45A
2.0
1.5
1.0
0.5
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
RFP45N06LE, RF1S45N06LESM
Typical Performance Curves
1.2
Unless Otherwise Specified
(Continued)
1.2
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.9
0.4
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
3000
2500
C, CAPACITANCE (pF)
C
ISS
2000
1500
1000
C
OSS
500
0
C
RSS
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DD
= BV
DSS
45
R
L
= 1.3Ω
I
G(REF)
= 1.3mA
V
GS
= 5V
30
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
2.50
V
DD
= BV
DSS
3.75
5.00
V
GS
, GATE TO SOURCE VOLTAGE (V)
15
1.25
0
-
20
---------------------
I G
(
ACT
)
I G
(
REF
)
t, TIME (µs)
-
80
---------------------
I G
(
ACT
)
I G
(
REF
)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
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