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IRGB4059DPBF

Description
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size294KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

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IRGB4059DPBF Overview

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

IRGB4059DPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionLEAD FREE PACKAGE-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA FAST SOFT RECOVERY
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)20 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)56 W
Certification statusNot Qualified
Maximum rise time (tr)14 ns
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)120 ns
Nominal on time (ton)35 ns

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