Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
BSS123LT1G
BVSS123LT1G*
BSS123LT3G
BSS123LT7G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.6
1.4
I
D
, DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
3V
T
J
= 25°C
8V
V
GS
= 10 V
6V
5V
4V
I
D
, DRAIN CURRENT (A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0
1
T
J
= 25°C
V
DS
= 10 V
T
J
= 150°C
2
3
T
J
=
−55°C
4
5
6
9
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
3.50
T
J
= 25°C
C, CAPACITANCE (pF)
3.25
3.00
2.75
2.50
2.25
V
GS
= 4.5 V
40
30
20
10
0
C
rss
0
10
50
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 0
C
iss
C
oss
V
GS
= 10 V
80
100
120
140
160
180
200
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (mA)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
Q
T
8
6
4
2
0
Q
GS
Q
GD
T
J
= 25°C
V
GS
= 10 V
V
DS
= 30 V
I
D
= 0.2 A
3
4
5
6
7
8
I
S
, SOURCE CURRENT (A)
0.1
1
Figure 4. Capacitance Variation
V
GS
= 0 V
0.01
0.001
T
J
= 125°C
T
J
= 25°C
0.4
0.6
T
J
=
−55°C
0.8
1.0
1.2
0
1
2
0.0001
0
0.2
Q
G
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 5. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 6. Diode Forward Voltage vs. Current
www.onsemi.com
3
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1
I
D
, DRAIN CURRENT (A)
0 V
≤
V
GS
≤
20 V
SINGLE PULSE
T
A
= 25°C
T
J
= 150°C
100
ms
1 ms
10 ms
100 ms
0.1
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
dc
100
1000
0.001
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
1000
D = 0.5
100
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
1 oz. Cu Pad, 5mm thick, 25mm
2
area
10
100
1000
10
0.1
0.000001
Figure 8. Thermal Response
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
SCALE 4:1
D
0.25
3
DATE 30 JAN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
E
1
2
HE
L
L1
VIEW C
T
3X
b
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
RECOMMENDED
SOLDERING FOOTPRINT
2.90
0.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. ANODE
3. CATHODE−ANODE
3. GATE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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