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RF071M2S

Description
0.7 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RF071M2S Overview

0.7 A, 200 V, SILICON, SIGNAL DIODE

RF071M2S Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-F2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PDSO-F2
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current15 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.7 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.025 µs
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
RF071M2S
Diodes
Fast recovery diode
RF071M2S
Applications
High frequency rectification
External dimensions
(Unit : mm)
0.80
+
0.1
1.6
+
0.1
Features
1) Small power mold type (PMDS)
2) Ultra low V
F
3) Very fast recovery
4) Low switching loss
CATHODE MARK
2.6
+
0.1
0.9
+
0.1
3.5
+
0.2
65
ROHM : PMDU
0.1
+
0.1
0.05
Construction
Silicon epitaxial planar
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward voltage (DC)
Average rectified forward current
Forward peak surge current
(60Hz . 1cyc.)
Junction temperature
Storage temperature
Mounting on glass epoxi board
Symbol
V
RM
V
R
I
F
I
O
I
FSM
Tj
Tstg
Limits
200
200
1.0
0.7
15
150
−55
to
+150
Unit
V
V
A
A
A
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
V
F
I
R
t
rr
Min.
Typ.
0.790
10n
ns
Max.
0.850
10µ
25
Unit
V
A
ns
I
F
=0.7A
V
R
=200V
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25 I
R
Conditions
+
Note) ESD sensitive product handing required.
1/2

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