DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK299
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR
4 PIN SMALL MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low C
rss
: 0.02 pF TYP.
• High G
PS
: 20 dB TYP.
• Low NF : 1.1 dB TYP.
• 4 PIN SMALL MINI MOLD PACKAGE
PACKAGE DIMENSIONS
in millimeters
0.3
+0.1
–0.05
0.3
+0.1
–0.05
3
4
0.3
+0.1
–0.05
0.15
+0.1
–0.05
(1.3)
1
0.9±0.1
0.3
0.4
+0.1
–0.05
V
DS
= 13 V, V
G1S
= –4 V, V
G2S
= 0
V
DS
= 5 V, V
G2S
= 0, V
G1S
= 0
V
DS
= 5 V, V
G2S
= 0 , I
D
= 100
µ
A
V
DS
= 5 V, V
G1S
= 0, I
D
= 100
µ
A
V
DS
= 0, V
G1S
= –4 V, V
G2S
= 0
V
DS
= 0, V
G2S
= –4 V, V
G1S
= 0
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 1.0 kHz
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 1 MHz
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 900 MHz
0 to 0.1
1. Source
2. Drain
3. Gate 2
4. Gate 1
2.1±0.2
1.25±0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSX
V
G1S
V
G2S
I
D
P
T
T
ch
T
stg
13
–4.5
–4.5
40
120
125
–55 to +125
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain Current
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
SYMBOL
I
DSX
I
DSS
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
|y
fs
|
18
25
5
20
MIN.
TYP.
MAX.
10
40
–3.5
–3.5
10
10
35
UNIT
TEST CONDITIONS
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
C
iss
C
rss
G
PS
NF
0.5
1.0
0.02
1.5
0.03
16.0
20.0
1.1
2.5
I
DSS
Classification
Class
Marking
I
DSS
U71
U71
5 to 15
U72
U72
10 to 25
U73
U73
20 to 35
Unit: mA
U74
U74
30 to 40
Document No. P11034EJ1V0DS00 (1st edition)
Date Published December 1995 P
Printed in Japan
2.0±0.2
(1.25)
0.60 0.65
µ
A
mA
V
V
µ
A
µ
A
ms
pF
pF
dB
dB
2
©
1995
3SK299
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
30
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 5 V
400
V
G2S
= 1.0 V
20
P
T
– Total Power Dissipation – mW
300
I
D
– Drain Current – mA
0.5 V
10
0V
200
100
–0.5 V
0
25
50
75
100
125
0
–1.0
0
+1.0
T
A
– Ambient Temperature – ˚C
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
30
30
V
G1S
– Gate 1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
y
fs
– Forward Transfer Admittance – mS
V
G2S
= 1.0 V
20
0.5 V
y
fs
– Forward Transfer Admittance – mS
V
DS
= 5 V
f = 1 kHz
V
DS
= 5 V
f = 1 kHz
V
G2S
= 1.0 V
20
V
G2S
= 0.5 V
10
0V
10
–0.5 V
0
–1.0
0
+1.0
0
10
20
30
V
G1S
– Gate 1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.0
V
DS
= 5 V
f = 1 MHz
10
30
I
D
– Drain Current – mA
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
DS
= 5 V
V
G2S
= 1 V
at I
D
= 10 mA
15
f = 900 MHz
0
C
iss
– Input Capacitance – pF
NF – Noise Figure – dB
1.0
V
G2S
= 1 V at I
D
= 10 mA
5
G
PS
– Power Gain – dB
G
PS
–15
V
G2S
= 1 V at I
D
= 5 mA
–30
NF
0
–1.0
0
V
G2S
– Gate 2 to Source Voltage – V
+1.0
0
–45
–3.0
–2.0
–1.0
0
+1.0
+2.0
V
G2S
– Gate 2 to Source Voltage – V
2
3SK299
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
10
20
20
G
PS
20
NF – Noise Figure – dB
NF – Noise Figure – dB
G
PS
– Power Gain – dB
G
PS
– Power Gain – dB
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
25
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
G
PS
15
5
10
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
5
10
5
NF
NF
0
0
10
0
5
I
D
– Drain Current – mA
10
0
5
V
DS
– Drain to Source Voltage – V
S-PARAMETER (V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA)
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
MAG
0.999
1.000
0.998
0.974
1.005
0.942
0.968
0.920
0.952
0.898
0.915
0.879
S11
ANG
–3.3
–7.2
–9.3
–13.4
–15.7
–19.1
–22.2
–25.2
28.9
–29.4
–35.1
–35.2
MAG
2.359
2.389
2.313
2.233
2.420
2.300
2.332
2.229
2.447
2.303
2.348
2.367
S21
ANG
177.2
169.3
164.4
160.0
158.4
150.0
145.5
141.5
136.8
131.1
125.8
123.5
MAG
0.006
0.004
0.000
0.004
0.007
0.003
0.004
0.008
0.004
0.001
0.004
0.000
S12
ANG
–122.3
123.0
–145.0
79.2
29.7
65.0
45.5
80.1
8.3
50.9
71.4
91.1
MAG
0.969
0.981
0.979
0.967
0.999
0.958
0.997
0 957
0.999
0.968
0.984
0.989
S22
ANG
–1.3
–2.9
–3.3
5.6
–5.8
–7.7
–8.5
–9.4
–12.5
–11.1
–14.8
–13.0
3
3SK299
900 MHz G
PS
AND NF TEST CIRCUIT
V
G2S
(1 V)
1 000 pF
47 kΩ
1 000 pF
to 10 pF
to 10 pF
INPUT
50
Ω
L
1
47 kΩ
RFC
to 10 pF
to 10 pF
L
2
OUTPUT
50
Ω
1 000 pF
1 000 pF
L
1
, L
2
35
×
5
×
0.2 mm
V
G1S
V
DD
(5 V)
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
4
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