DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D087
PBSS4350Z
50 V low V
CEsat
NPN transistor
Product data sheet
Supersedes data of 2003 Jan 20
2003 May 13
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High collector current capability: I
C
and I
CM
•
High collector current gain (h
FE
) at high I
C
•
Higher efficiency leading to less heat generation
•
Reduced PCB area requirements compared to DPAK.
PINNING
APPLICATIONS
•
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
•
Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
NPN low V
CEsat
transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
MARKING
TYPE NUMBER
PBSS4350Z
MARKING CODE
PB4350
1
Top view
2
3
handbook, halfpage
PBSS4350Z
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R
CEsat
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX.
50
5
<145
UNIT
V
A
mΩ
PIN
1
2
3
4
base
collector
emitter
collector
DESCRIPTION
4
2, 4
1
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
2003 May 13
2
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
notes 1 and 3
T
amb
≤
25
°C;
notes 2 and 3
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS4350Z
MAX.
60
50
6
3
5
1
1.35
2
+150
150
+150
V
V
V
A
A
A
W
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
CONDITIONS
in free air; notes 2 and 3
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
VALUE
92
62.5
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air; notes 1 and 3
2003 May 13
3
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 50 V; I
E
= 0
V
CB
= 50 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A; note 1
V
CE
= 2 V; I
C
= 2 A; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
I
C
= 2 A; I
B
= 200 mA; note 1
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
V
CE
= 2 V; I
C
= 1 A; note 1
I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
MIN.
−
−
−
200
200
100
−
−
−
−
−
−
100
−
PBSS4350Z
TYP.
−
−
−
−
−
−
−
−
−
110
−
−
−
−
MAX.
100
50
100
−
−
−
90
170
290
<145
1.2
1.1
−
30
UNIT
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
2003 May 13
4
NXP Semiconductors
Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350Z
handbook, halfpage
600
MGW175
handbook, halfpage
hFE
500
(1)
1.2
VBE
(V)
1.0
MGW176
(1)
400
(2)
0.8
(2)
300
0.6
(3)
200
(3)
0.4
100
0.2
0
10
−1
1
10
10
2
10
3
10
4
I C (mA)
0
10
−1
1
10
10
2
10
3
10
4
I C (mA)
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 2 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25 C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector-current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
10
2
(1)
MGW181
handbook, halfpage
1.2
VBEsat
(V)
1.0
MGW178
(1)
0.8
(2)
0.6
(2)
(3)
(3)
10
0.4
0.2
1
10
−1
1
10
10
2
10
3
10
4
I C (mA)
0
10
−1
1
10
10
2
10
3
10
4
I C (mA)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation as a function of
collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2003 May 13
5
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