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NAND256R4A2AZA6F

Description
16MX16 FLASH 1.8V PROM, 12000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
Categorystorage    storage   
File Size952KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

NAND256R4A2AZA6F Overview

16MX16 FLASH 1.8V PROM, 12000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

NAND256R4A2AZA6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA, BGA55,8X12,32
Contacts55
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time12000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B55
JESD-609 codee1
length10 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size2K
Number of terminals55
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA55,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size256 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.05 mm
Department size8K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width8 mm
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
Figure 1. Packages
NAND INTERFACE
TSOP48 12 x 20mm
SUPPLY VOLTAGE
PAGE SIZE
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
USOP48 12 x 17 x 0.65mm
FBGA
BLOCK SIZE
VFBGA55 8 x 10 x 1mm
VFBGA63 9 x 11 x 1mm
PAGE READ / PROGRAM
Random access: 12µs (3V)/15us (1.8V)
(max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
Fast page copy without external buffering
HARDWARE DATA PROTECTION
Program/Erase locked during Power
transitions
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
Lead-Free Components are Compliant
with the RoHS Directive
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
1/56
COPY BACK PROGRAM MODE
FAST BLOCK ERASE
Block erase time: 2ms (Typ)
RoHS COMPLIANCE
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
Simple interface with microcontroller
DEVELOPMENT TOOLS
SERIAL NUMBER OPTION
August 2005

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