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ZVP2106GTA

Description
Power Field-Effect Transistor, 0.45A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size304KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZVP2106GTA Overview

Power Field-Effect Transistor, 0.45A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

ZVP2106GTA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time17 weeks
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID376171
Samacsys Pin Count4
Samacsys Part CategoryMOSFET (P-Channel)
Samacsys Package CategorySOT223 (3-Pin)
Samacsys Footprint NameZVP2106GTA
Samacsys Released Date2018-09-26 09:51:00
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.45 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 1386  918  2886  2016  37  28  19  59  41  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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