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IR180SG12HCB

Description
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
CategoryAnalog mixed-signal IC    Trigger device   
File Size52KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

IR180SG12HCB Overview

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

IR180SG12HCB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeWAFER
package instructionUNCASED CHIP, S-XUUC-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Maximum DC gate trigger current45 mA
Maximum DC gate trigger voltage1.9 V
Maximum holding current150 mA
JESD-30 codeS-XUUC-N2
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
Bulletin I0203J 06/98
IR180SG..HCB SERIES
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Square 180 mils
4"
600 and 1200 V
Glassivated MESA
Reference IR Packaged Part:
n. a.
Major Ratings and Characteristics
Parameters
V
TM
V
RRM
I
GT
V
GT
I
H
I
L
Maximum On-state Voltage
Reverse Breakdown Voltage
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Holding Current Range
Maximum Latching Current
Units
1.3 V
600 and 1200 V
45 mA
1.9 V
5 to 150 mA
400 mA
Test Conditions
T
J
= 25°C, I
T
= 25 A
T
J
= 25°C, I
RRM
= 300 µA
(1)
T
J
= 25° C, anode supply = 6 V, resistive load
T
J
= 25° C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
180 x 180 mils (see drawing)
100 mm, with std. < 100 > flat
350 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
Document Number: 93884
www.vishay.com
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