ESDAVLC8-1BU2
Single-line low capacitance Transil™, transient surge voltage
suppressor (TVS) for bidirectional ESD protection
Datasheet
−
production data
Features
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■
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■
■
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Bidirectional device
Withstands multiple ESD strikes
Very low diode capacitance: 5 pF typ. at 0 V
Low leakage current
0201 SMD package size compatible
Ultra small PCB area: 0.18 mm
2
RoHS compliant
Pin 2 available in different forms
ST0201 package
Benefits
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■
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High ESD protection level
High integration
Suitable for high density boards
MSL1
Figure 1.
Functional diagram (top view)
Complies with the following standards:
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IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
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Portable multimedia players and accessories
Notebooks
Digital cameras and camcorders
Communication systems
Cellular phone handsets and accessories
Description
The ESDAVLC8-1BU2 is a bidirectional single line
TVS diode designed to protect the data lines or
other I/O ports against ESD transients.
The device is ideal for applications where both
reduced line capacitance and board space saving
are required.
TM: Transil is a trademark of STMicroelectronics
May 2012
This is information on a product in full production.
Doc ID 16546 Rev 2
1/11
www.st.com
11
Characteristics
ESDAVLC8-1BU2
1
Table 1.
Symbol
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse voltage:
IEC 61000-4-2 contact discharge
EC 61000-4-2 air discharge
Peak pulse current (8/20 µs)
Junction temperature
Storage temperature range
Maximum lead temperature for soldering during 10 s
Operating junction temperature range
Value
Unit
V
PP
I
PP
T
j
T
stg
T
L
T
op
± 15
± 16
1.5
125
- 55 to +150
260
-40 to +125
kV
A
°C
°C
°C
°C
Figure 2.
Electrical characteristics (definitions)
Symbol
V
BR
V
CL
I
RM
V
RM
I
F
I
PP
I
R
V
F
R
d
aT
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Stand-off voltage
Forward current
Peak pulse current
Breakdown current
Forward voltage drop
Dynamic impedance
Voltage temperature
=
=
=
=
=
=
=
=
=
=
Table 2.
Symbol
V
BR
I
RM
R
d
αT
C
line
Electrical characteristics (values, T
amb
= 25 °C)
Test Condition
From pin1 to pin 2, I
R
= 1 mA
From pin 2 to pin1, I
R
= 1 mA
V
RM
= 3 V
Square pulse, I
PP
= 1 A t
p
= 2.5 µs
ΔV
BR
=
αT(T
amb
- 25 °C) x V
BR
(25 °C)
V
R
= 0 V, F
osc
= 1 MHz, V
osc
= 30 mV
5
2.5
6
7
Min.
8.5
14.5
Typ.
11
V
17
100
nA
Ω
10
-4
/°C
pF
Max.
Unit
2/11
Doc ID 16546 Rev 2
ESDAVLC8-1BU2
Characteristics
Figure 3.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
P
PP
(W)
1000
T
j
initial = 25°C
100
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
T
j
(°C)
t
P
(µs)
10
1
10
100
1000
Figure 5.
Junction capacitance versus
reverse applied voltage
(typical values)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 6.
Relative variation of leakage
current versus junction
temperature (typical values)
5
C(pF)
100
I
R
[T
j
] / I
R
[T
j
=25°C]
V
R
=3V
4
3
10
2
1
V
R
(V)
0
0.0
1.0
2.0
3.0
4.0
-5.0
-4.0
-3.0
-2.0
-1.0
5.0
1
25
50
75
100
T
j
(°C)
125
Figure 7.
ESD response to IEC 61000-4-2
(+8 kV contact discharge)
Figure 8.
ESD response to IEC 61000-4-2
(-8 kV contact discharge)
10 V/Div
10 V/Div
20 ns/Div
20 ns/Div
Doc ID 16546 Rev 2
3/11
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