P4KE6.8 thru P4KE540A
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-204AL (DO-41)
MAJOR RATINGS AND CHARACTERISTICS
V
(BR)
Unidirectional
V
(BR)
Bidirectional
P
PPM
P
D
I
FSM
(Unidirectional only)
T
j
max.
6.8 V to 540 V
6.8 V to 440 V
400 W
1.0 W
40 A
175 °C
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirection use C or CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 µs
Peak pulse current with a 10/1000 µs
waveform
(1)
(Fig. 1)
waveform
(1)
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
(3)
LIMIT
400
see next table
1.0
40
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only
Maximum instantaneous forward voltage at 25 A for unidirectional only
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for P4KE220(A) & below; V
F
= 5.0 V for P4KE250(A) & above
Document Number 88365
07-Jun-06
www.vishay.com
1
P4KE6.8 thru P4KE540A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN VOLTAGE
DEVICE TYPE
V
(BR)
AT I
T
(V)
MIN
P4KE75A
P4KE82
P4KE82A
P4KE91
P4KE91A
P4KE100
P4KE100A
P4KE110
P4KE110A
P4KE120
P4KE120A
P4KE130
P4KE130A
P4KE150
P4KE150A
P4KE160
P4KE160A
P4KE170
P4KE170A
P4KE180
P4KE180A
P4KE200
P4KE200A
P4KE220
P4KE220A
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
P4KE440
P4KE440A
P4KE480
P4KE480A
P4KE510
P4KE510A
P4KE540
P4KE540A
Note:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) For bidirectional types having V
WM
of 10 volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
(1)
MAX
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-
OFF
VOLTAGE
V
WM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D (3)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
3.9
3.4
3.5
3.1
3.2
2.8
2.9
2.5
2.6
2.3
2.4
2.1
2.2
1.9
1.9
1.7
1.8
1.6
1.7
1.6
1.6
1.4
1.5
1.2
1.2
1.1
1.2
0.93
1.0
0.79
0.83
0.70
0.73
0.63
0.66
0.58
0.61
0.55
0.57
0.52
0.54
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
(BR)
(%/°C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Document Number 88365
07-Jun-06
www.vishay.com
3
P4KE6.8 thru P4KE540A
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient, L
Lead
= 10 mm
SYMBOL
R
θJL
R
θJA
LIMIT
60
100
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
P4KE6.8A-E3/54
UNIT WEIGHT (g)
0.350
PREFERRED PACKAGE CODE
54
BASE QUANTITY
4000
DELIVERY MODE
13" Diameter Paper Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
tr = 10
µsec.
Peak
Value
I
PPM
100
Half
Value
- IPP
2
I
PPM
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
1
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM
, Peak Pulse Power (kW)
50
10/1000
µsec. Waveform
as defined
by
R.E.A.
td
0.1
0.1
µs
0
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
0
1.0
2.0
3.0
4.0
td, Pulse
Width
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
10000
75
C
J
, Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Measured at
Zero Bias
50
100
Measured at Stand-off
Voltage V
WM
10
25
0
0
25
50
75
100
125
150
175
200
1.0
10
100
200
T
J
- Initial Temperature (°C)
V
(BR)
- Breakdown
Voltage
(V)
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
Figure 4. Typical Junction Capacitance Uni-Directional
www.vishay.com
4
Document Number 88365
07-Jun-06
P4KE6.8 thru P4KE540A
Vishay General Semiconductor
1.00
100
0.75
Instantaneous Reverse Leakage
Current (µA)
P
D
, Power Dissipation (W)
60 Hz
Resistive or
Inductive Load
Measured at Devices
Stand-off
Voltage V
WM
T
A
= 25 °C
10
0.50
L = 0.375" (9.5 mm)
Lead Lengths
1
0.25
0.1
0
0
25
50
75
100
125
150
175
200
0.01
0
100
200
300
400
500
600
T
L
- Lead Temperature (°C)
V
(BR)
- Breakdown
Voltage
(V)
Figure 5. Power Derating Curve
Figure 7. Typical Reverse Leakage Characteristics
200
100
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
Transient Thermal Impedance (°C/W)
100
Peak Forward Surge Current (A)
50
10
10
1
5
10
50
1
0.001
0.01
0.1
1
10
100
1000
Number
of Cycles at 60 Hz
t - Pulse Duration (sec.)
Figure 6. Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
Figure 8. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88365
07-Jun-06
www.vishay.com
5
Microchip MCU
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