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PMEG4010ESB

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size690KB,14 Pages
ManufacturerBREL International Components
Environmental Compliance
Download Datasheet Parametric View All

PMEG4010ESB Overview

Rectifier Diode

PMEG4010ESB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PBCC-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID786998
Samacsys Pin Count2
Samacsys Part CategorySchottky Diode
Samacsys Package CategoryOther
Samacsys Footprint NameDSN1006-2(SOD993)
Samacsys Released Date2019-10-18 08:33:21
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PBCC-N2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.525 W
GuidelineIEC-60134
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.0029 µs
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Base Number Matches1
PMEG4010ESB
27 November 2015
40 V, 1 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
Average forward current: I
F(AV)
≤ 1 A
Reverse voltage: V
R
≤ 40 V
Low forward voltage, typical: V
F
= 510 mV
Low reverse current, typical: I
R
= 13 µA
Package height typ. 270 µm
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T
sp
≤ 140 °C;
square wave
T
j
= 25 °C
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 20 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
V
R
= 40 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
-
13
40
µA
-
2.1
6
µA
-
-
-
510
40
610
V
mV
Min
-
Typ
-
Max
1
Unit
A
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