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PMEG4010ESBYL

Description
PMEG4010ESB - 40 V, 1 A low VF MEGA Schottky barrier rectifier
CategoryDiscrete semiconductor    diode   
File Size690KB,14 Pages
ManufacturerBREL International Components
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PMEG4010ESB - 40 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG4010ESBYL Parametric

Parameter NameAttribute value
Brand NameNexperia
package instructionDSN1006-2, 2 PIN
Manufacturer packaging codeSOD993
Reach Compliance Codecompliant
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PBCC-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum power dissipation0.525 W
GuidelineIEC-60134
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.0029 µs
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1
PMEG4010ESB
27 November 2015
40 V, 1 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
Average forward current: I
F(AV)
≤ 1 A
Reverse voltage: V
R
≤ 40 V
Low forward voltage, typical: V
F
= 510 mV
Low reverse current, typical: I
R
= 13 µA
Package height typ. 270 µm
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T
sp
≤ 140 °C;
square wave
T
j
= 25 °C
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 20 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
V
R
= 40 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
-
13
40
µA
-
2.1
6
µA
-
-
-
510
40
610
V
mV
Min
-
Typ
-
Max
1
Unit
A

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