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1N5817L

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 20V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size149KB,2 Pages
ManufacturerBytesonic Corporation
Download Datasheet Parametric View All

1N5817L Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 20V V(RRM), Silicon, DO-41,

1N5817L Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.4 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current25 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage20 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5817L
THRU
1N5819L
1.0 AMP SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
20 to 40 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
*BothnormalandPbfreeproductareavailable:
*Normal:80~95%Sn,5~20%Pb
*Pbfree:99SnabovecanmeetRohsenviromentsubstance
directiverequest
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=90 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
1N5817L
20
14
20
1N5818L
30
21
30
1.0
25
0.4
0.5
10
110
80
-65 +125
-65 +150
1N5819L
40
28
40
UNITS
V
V
V
A
A
V
mA
mA
pF
C/W
C
C
Ta=100 C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5"(12.7mm) Lead Length.
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