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10RIA100S90M

Description
Silicon Controlled Rectifier, 10000mA I(T), 1000V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size182KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

10RIA100S90M Overview

Silicon Controlled Rectifier, 10000mA I(T), 1000V V(DRM)

10RIA100S90M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Nominal circuit commutation break time110 µs
Maximum DC gate trigger current60 mA
Maximum DC gate trigger voltage2 V
Maximum holding current130 mA
Maximum leakage current10 mA
On-state non-repetitive peak current240 A
Maximum on-state voltage1.75 V
Maximum on-state current10000 A
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Off-state repetitive peak voltage1000 V
Trigger device typeSCR
Base Number Matches1
Bulletin I2405 rev. A 07/00
10RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1200V V
DRM
/ V
RRM
10A
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
10RIA
10
85
25
225
240
255
233
100 to 1200
110
- 65 to 125
Unit
A
°C
A
A
A
A
2
s
A
2
s
V
µs
°C
Case Style
TO-208AA (TO-48)
www.irf.com
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