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1N4738AT50R

Description
DIODE 8.2 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size22KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

1N4738AT50R Overview

DIODE 8.2 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, Voltage Regulator Diode

1N4738AT50R Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance4.5 Ω
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current31 mA
Base Number Matches1
1N4728A - 1N4752A Series
1N4728A - 1N4752A Series One Watt Zeners
Absolute Maximum Ratings*
P a ra m e te r
S to ra g e T e m p e ra tu re R a n g e
M a x im u m J u n c tio n O p e ra tin g T e m p e ra tu re
L e a d T e m p e ra tu re (1 /1 6 ” fro m c a s e fo r 1 0 s e c o n d s )
T o ta l D e v ic e D is s ip a tio n
D e ra te a b o v e 5 0
°
C
T h e rm a l re s is ta n c e J u n c tio n to L e a d
T h e rm a l re s is ta n c e J u n c tio n to A m b ie n t
S u rg e P o w e r* *
TA = 25°C unless otherwise noted
Tolerance: A = 5%
V a lu e
-6 5 to + 2 0 0
+ 200
+ 230
1 .0
6 .6 7
5 3 .5
100
10
U n its
°
C
°
C
°
C
W
m W /° C
°
C /W
°
C /W
W
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
**
Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DO-41
Electrical Characteristics
Device
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
TA = 25°C unless otherwise noted
V
Z
(V)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
Z
Z
(Ω)
10
10
9.0
9.0
8.0
7.0
5.0
2.0
3.5
4.0
4.5
5.0
7.0
8.0
9.0
10
14
16
20
22
23
25
35
40
45
@
I
ZT
(mA)
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
Z
ZK
(Ω)
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1,000
1,000
@
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
@
I
R
(µA)
100
100
50
10
10
10
10
10
10
10
10
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
I
SURGE
(mA)
1,380
1,260
1,190
1,070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
I
ZM
(mA)
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
V
F
Foward Voltage = 1.2 V Maximum @ I
F
= 200 mA for all 1N4700 series
©1997
Fairchild Semiconductor Corporation
1N4700A Rev. B
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