2SC1623
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain:h
FE
=200TYP
(V
CE
=6.0V,I
C
=1.0mA).
High Voltage:V
CEO
=50V.
K
B
E
A
SOT-23
Dim
Min
2.70
1.10
Max
3.10
1.50
SOT-23
A
B
C
D
E
G
H
J
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
APPLICATIONS
NPN Silicon Epitaxial Planar Transistor.
Audio frequency general purpose amplifier.
D
G
H
J
0.1 Typical
ORDERING INFORMATION
Type No.
2SC1623
Marking
L4/L5/L6/L7
Package Code
SOT-23
C
K
All Dimensions in mm
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
60
50
5
100
200
-55 to +150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base Emitter Voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
unless otherwise specified
MIN
60
50
5
0.1
0.1
90
200
0.15
0.86
0.55
0.62
250
3.0
600
0.3
1.0
0.65
V
V
V
MHz
pF
TYP
MAX UNIT
V
V
V
μA
μA
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
E
= -10mA
V
CB
=6V, I
E
= 0,f=1.0MHz
CLASSIFICATION
Rank
Range
Marking
OF
L4
90-180
L4
h
FE(1)
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7
ht
t
p
:
//
Revision:20170701-P1
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