BSP372
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
•
V
GS(th)
= 0.8 ...2.0 V
•
Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
V
DS
100 V
I
D
1.7 A
R
DS(on)
0.31
Ω
Tape and Reel Information
L6327: 1000 pcs/reel
Marking
BSP372
Packaging
Non dry
BSP372
Type
BSP372
Package
PG-SOT223
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 28 ˚C
I
D
A
1.7
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
6.8
E
AS
Avalanche energy, single pulse
I
D
= 1.7 A,
V
DD
= 25 V,
R
GS
= 25
Ω
L
= 23.3 mH,
T
j
= 25 ˚C
mJ
45
V
GS
V
gs
P
tot
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
A
= 25 ˚C
±
14
±
20
V
W
1.8
Rev 2.0
1
2008-03-31
BSP372
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Thermal resistance, junction-soldering point
1)
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJS
-55 ... + 150
-55 ... + 150
˚C
≤
70
≤
10
55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Values
typ.
max.
Unit
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 0 ˚C
V
(BR)DSS
V
100
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
I
DSS
1.4
2
µA
Zero gate voltage drain current
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 ˚C
-
-
I
GSS
0.1
10
1
100
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-state resistance
V
GS
= 5 V,
I
D
= 1.7 A
Ω
-
0.24
0.31
Rev 2.0
2
2008-03-31
BSP372
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 1.7 A
g
fs
S
2
3.7
-
pF
-
415
520
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
80
100
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
50
65
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
G
= 50
Ω
-
t
r
20
30
Rise time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
G
= 50
Ω
-
t
d(off)
35
55
Turn-off delay time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
G
= 50
Ω
-
t
f
110
165
Fall time
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 0.3 A
R
G
= 50
Ω
-
50
75
Rev 2.0
3
2008-03-31
BSP372
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 ˚C
I
S
A
-
-
1.7
Inverse diode direct current,pulsed
T
A
= 25 ˚C
I
SM
-
V
SD
-
6.8
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 1.7 A
-
t
rr
0.85
1.1
ns
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
-
Q
rr
65
-
µC
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
-
0.11
-
Rev 2.0
4
2008-03-31
BSP372
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
5 V
1.8
A
2.0
W
P
tot
1.6
1.4
I
D
1.4
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
˚C
160
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
˚C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0,
T
C
=25˚C
Transient thermal impedance
Z
th JA
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
2
K/W
10
1
Z
thJA
10
0
10
-1
D = 0.50
0.20
0.10
10
-3
10
-2
0.05
single pulse
0.02
0.01
10
-4
10
-5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
t
p
Rev 2.0
5
2008-03-31
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