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1SS389L3F(B

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size206KB,3 Pages
ManufacturerECLIPTEK
Websitehttp://www.ecliptek.com
Download Datasheet Parametric View All

1SS389L3F(B Overview

Rectifier Diode

1SS389L3F(B Parametric

Parameter NameAttribute value
MakerECLIPTEK
package instructionR-PDSO-F2
Reach Compliance Codeunknown
Is SamacsysN
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.5 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current1 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage15 V
Maximum reverse current20 µA
Reverse test voltage10 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
1SS389
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS389
High Speed Switching Application
Small package
Low forward voltage: V
F
= 0.23V (typ.) @I
F
= 5mA
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P*
T
j
T
stg
T
opr
Rating
15
10
200
100
1
150
125
−55
to 125
−40
to 100
Unit
V
V
mA
mA
A
mW
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 1.4mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
CT
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 5mA
I
F
= 100mA
V
R
= 10V
VR = 0, f = 1MHz
Min
Typ.
0.18
0.23
0.35
20
Max
0.30
0.50
20
40
μA
pF
V
Unit
Equivalent Circuit
(Top View)
Marking
Start of commercial production
1994-11
1
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