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1SV303

Description
DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-1G1A, 2 PIN, Variable Capacitance Diode
CategoryDiscrete semiconductor    diode   
File Size84KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1SV303 Overview

DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-1G1A, 2 PIN, Variable Capacitance Diode

1SV303 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging code1-1G1A
Reach Compliance Codeunknown
Is SamacsysN
Other features2.5% MATCHED GROUP AVAILABLE
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance9.68%
Minimum diode capacitance ratio17
Nominal diode capacitance47 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
Maximum reverse current0.01 µA
Reverse test voltage32 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
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