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BDS21-QR-EBR1

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, TO-220SM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size61KB,1 Pages
ManufacturerSEMELAB
Environmental Compliance
Download Datasheet Parametric View All

BDS21-QR-EBR1 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, TO-220SM, 3 PIN

BDS21-QR-EBR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMELAB
package instructionCHIP CARRIER, R-CBCC-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)1000
JESD-30 codeR-CBCC-N3
JESD-609 codee1
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
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