BSM150GB170DN2 datasheet, PDF - EEWORLD Datasheet

BSM150GB170DN2: DescriptionInsulated Gate Bipolar Transistor, 220A I(C), 1700V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size131KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Insulated Gate Bipolar Transistor, 220A I(C), 1700V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code	unknown
Is Samacsys	N
Shell connection	ISOLATED
Maximum collector current (IC)	220 A
Collector-emitter maximum voltage	1700 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)	160 ns
Gate emitter threshold voltage maximum	6.2 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	2500 W
Certification status	Not Qualified
Maximum rise time (tr)	400 ns
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Maximum off time (toff)	1800 ns
Nominal off time (toff)	1200 ns
Maximum opening time (tons)	1000 ns
Nominal on time (ton)	520 ns
VCEsat-Max	3.9 V
Base Number Matches	1

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