Insulated Gate Bipolar Transistor, 220A I(C), 1700V V(BR)CES, N-Channel,
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| package instruction | FLANGE MOUNT, R-XUFM-X7 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 220 A |
| Collector-emitter maximum voltage | 1700 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Maximum landing time (tf) | 160 ns |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-XUFM-X7 |
| Number of components | 2 |
| Number of terminals | 7 |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 2500 W |
| Certification status | Not Qualified |
| Maximum rise time (tr) | 400 ns |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 1800 ns |
| Nominal off time (toff) | 1200 ns |
| Maximum opening time (tons) | 1000 ns |
| Nominal on time (ton) | 520 ns |
| VCEsat-Max | 3.9 V |
| Base Number Matches | 1 |
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