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BYV44-500

Description
Rectifier Diode, 1 Phase, 2 Element, 15A, 500V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size203KB,8 Pages
ManufacturerECLIPTEK
Websitehttp://www.ecliptek.com
Environmental Compliance
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BYV44-500 Overview

Rectifier Diode, 1 Phase, 2 Element, 15A, 500V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3

BYV44-500 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerECLIPTEK
package instructionR-PSFM-T3
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.36 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current160 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
GuidelineIEC-134
Maximum repetitive peak reverse voltage500 V
Maximum reverse current50 µA
Maximum reverse recovery time0.06 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

BYV44-500 Preview

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV44 series
Dual rectifier diodes
ultrafast
Product
specification
October 1998
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYV44 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
1.12 V
I
O(AV)
= 30 A
t
rr
60 ns
SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV44 series is supplied in the
conventional
leaded
SOT78
(TO220AB) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
CONDITIONS
BYV44
T
mb
136˚C
square wave;
δ
= 0.5;
T
mb
94 ˚C
t = 25
µs; δ
= 0.5;
T
mb
94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
30
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
60
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
1
Neglecting switching and reverse current losses.
For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab.
October 1998
1
Rev 1.400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
BYV44 series
TYP.
0.95
1.08
1.15
10
0.3
40
50
4.2
2.5
MAX.
1.12
1.25
1.36
50
0.8
60
60
5.2
-
UNIT
V
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
30
25
PF / W
Vo = 0.8900 V
Rs = 0.0137 Ohms
BYV44
Tmb(max) / C
88
D = 1.0
90
0.5
102
114
t
p
t
p
T
t
t
rr
time
20
15
10
0.2
0.1
Q
I
R
I
s
10%
100%
5
I
D=
126
138
T
rrm
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
D.
PF / W
Vo = 0.89
Rs = 0.0137
I
F
20
BYV44
Tmb(max) / C
102
a = 1.57
1.9
2.2
114
15
4
10
2.8
time
VF
V
VF
time
126
5
138
fr
0
0
5
10
150
15
IF(AV) / A
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998
2
Rev 1.400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV44 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100
1A
100
2A
10
Tj = 25 C
Tj = 100 C
1
1
10
dIF/dt (A/us)
100
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C; per diode
Fig.8. Maximum Q
s
at T
j
= 25˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
10us
T
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV42E
10s
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C; per
diode
Fig.9. Transient thermal impedance per diode
Z
th j-mb
= f(t
p
)
50
IF / A
Tj = 25 C
Tj = 150 C
BYV74
40
30
typ
20
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1998
3
Rev 1.400
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