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BZV55-F2V7

Description
Zener Diode, 2.7V V(Z), 3%, 0.4W, Silicon, Unidirectional, GLASS, MINI MELF-2
CategoryDiscrete semiconductor    diode   
File Size715KB,6 Pages
ManufacturerFagor Electrónica
Download Datasheet Parametric View All

BZV55-F2V7 Overview

Zener Diode, 2.7V V(Z), 3%, 0.4W, Silicon, Unidirectional, GLASS, MINI MELF-2

BZV55-F2V7 Parametric

Parameter NameAttribute value
MakerFagor Electrónica
Parts packaging codeMELF
package instructionGLASS, MINI MELF-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage2.7 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance3%
Working test current5 mA
BZV55
500 mW Surface Mounted Zener Diode
Dimensions in mm.
GLASS CASE:
Mini Melf / SOD-80
Voltage
2.4 V to 75 V
Power Dissipation
500 mW
Mounting Pad Layout
Features
• Silicon Planar Power Zener Diodes.
• For use as low voltage stabilizer or voltage reference.
• The Zener voltages are graded according to the
international E 24 standard. Higher Zener voltages
and 1% tolerance available on request.
• Diodes available in these tolerance series:
±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Blue
Maximum Ratings and Thermal Characteristics at 25 ºC
(Unless otherwise specified)
Symbol
Parameter
Zener current (see Table "Characteristics")
Power Dissipation at T
flange
=50°C
Power Dissipation at T
A
=50°C
Junction temperature
Storage temperature range
Continuous forward current
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Peak reverse power dissipation (non-repetitive) t
p
=100µs
1. Mounted on ceramic substrate 10mm x 10mm x 0.6mm
2. T
j
= 150°C
Value
500
400
(1)
-65 to +175
-65 to +175
250
0.38
(1)
0.30
30
(2)
Unit
mW
mW
°C
°C
mA
°C/mW
°C/mW
W
P
tot
P
tot
T
j
T
s
I
F
R
th (j-a)
R
th (j-l)
P
ZSM
NOTES:
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