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DT61N12KOF

Description
Silicon Controlled Rectifier
CategoryAnalog mixed-signal IC    Trigger device   
File Size402KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Silicon Controlled Rectifier

DT61N12KOF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Trigger device typeSCR
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT61N
TT61N
5555Kenndaten
TT61N...-K
TD61N
TD61N...-A
DT61N
DT61N...-K
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 76°c
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
1600
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1600
1300
1700
1400 V
V
1400 V
V
1500 V
V
120 A
60 A
76 A
1550 A
1400 A
12000 A²s
9800 A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 300 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
1,9 V
0,8 V
3,4 mΩ
max.
max.
max.
max.
max.
max.
max.
max.
max.
120 mA
1,4 V
5,0 mA
2,5 mA
0,2 V
200 mA
620 mA
20 mA
3 µs
T
vj
= 25°C, v
D
= 6 V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
09.07.02
3
BIP AC/ 16.05.2002; Drilling
A 05/02
Seite/page
1/2
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