JAN1N4119CUR-1 datasheet, PDF - EEWORLD Datasheet

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JAN1N4119CUR-1: DescriptionZener Diode, 28V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN; CategoryDiscrete semiconductor diode; File Size91KB，19 Pages; ManufacturerBkc Semiconductors Inc.

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JAN1N4119CUR-1 Overview

Zener Diode, 28V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN

JAN1N4119CUR-1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Bkc Semiconductors Inc.
package instruction	O-LELF-R2
Reach Compliance Code	unknown
Is Samacsys	N
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	200 Ω
JEDEC-95 code	DO-213AA
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Guideline	MIL-19500/435F
Nominal reference voltage	28 V
surface mount	YES
technology	ZENER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND
Terminal location	END
Maximum voltage tolerance	2%
Working test current	0.25 mA
Base Number Matches	1

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The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 26 April 2000.

INCH-POUND

MIL-PRF-19500/435E

26 January 2000

SUPERSEDING

MIL-S-19500/435D

21 October 1994

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES

1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,

1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES

JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Five levels of product assurance

are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product

assurance for each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.

1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and

JANKC).

1.3 Maximum ratings. Maximum ratings are as shown in 5 and 10 of table II herein and as follows:

= 500 mW (D0-7, D0-35) at T

= 50°C, L = 0.375 inch (9.53 mm); both ends of case or diode body to

heat sink at L = 0.375 inch (9.53 mm). (Derate I

to 0.0 mA dc at +175°C).

= 500 mW (D0-213AA) at T

= 125°C. (Derate to 0 at 175°C).

-65°C

≤

+175°C; -65°C

≤

STG

≤

+175°C.

1.4 Primary electrical characteristics. Primary electrical characteristic columns 2, 5, 7, 8, and 9 of table II herein

and as follows:

1.8 V dc

≤

100 V dc.

θJL

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).

θJEC

= 100°C/W (maximum) junction to endcaps (D0-213AA).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-

VAC, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement

Proposal (DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-19500/435E

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and

supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

MILITARY

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-

5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein (except for related associated specifications or specification sheets), the text of this document takes

precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific

exemption has been obtained.

3. REQUIREMENTS

3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the

qualifying activity for listing on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3).

3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and

as specified herein.

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

TEC .................................................

Temperature of endcap.

.................................................2 percent voltage tolerance.

.................................................1 percent voltage tolerance.

3.3.1 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction

or straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).

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