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JAN1N6630US

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, GLASS, D-5B PACKAGE, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size225KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JAN1N6630US Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, GLASS, D-5B PACKAGE, 2 PIN

JAN1N6630US Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-LELF-R2
Contacts2
Manufacturer packaging codeD-5B PACKAGE
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
applicationULTRA FAST RECOVERY POWER
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee0
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusQualified
GuidelineMIL-19500/590F
Maximum reverse recovery time0.05 µs
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
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