JANS1N6106A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> JANS1N6106A

JANS1N6106A: DescriptionTrans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size109KB，2 Pages; ManufacturerSEMTECH; Websitehttp://www.semtech.com

Download Datasheet Parametric View All

JANS1N6106A Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	JANS1N6106A	-	-	View	Buy Now

JANS1N6106A Overview

Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

JANS1N6106A Parametric

Parameter Name	Attribute value
Maker	SEMTECH
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	HIGH RELIABILITY
Minimum breakdown voltage	9.5 V
Breakdown voltage nominal value	10 V
Shell connection	ISOLATED
Maximum clamping voltage	14.5 V
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e2
Maximum non-repetitive peak reverse power dissipation	500 W
Number of components	2
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	1.5 W
Certification status	Qualified
Guideline	MIL-19500/516
Maximum repetitive peak reverse voltage	7.6 V
surface mount	NO
technology	ZENER
Terminal surface	TIN COPPER
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

Preview

Download Datasheet

View All

QPL

500 Watt Axial Leaded TVS

1N6102A

1N6137A

Thru

TEL:805-498-2111 FAX:805-498-3804

DESCRIPTION

The 1N61xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices are

constructed using two p-n junction TVS diodes in a back-to-

back configuration, hermetically sealed in a voidless glass

package. The hermetically sealed package provides high

reliability in harsh environmental conditions. TVS diodes

are further characterized by their high surge capability, low

operating and clamping voltages, and a theoretically

instantaneous response time. This makes them ideal for

use as board level protection for sensitive semiconductor

components.

FEATURES:

•

500 Watts Peak Pulse Power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Military & Industrial applications

Available in

JAN, JTX, JTXV

and

JANS

versions

per MIL-S-19500/516

MECHANICAL CHARACTERISTICS:

•

Hermetically sealed glass package

Tinned copper leads

Marking : P/N, date code, logo

MAXIMUM RATINGS

RATING

Peak Pulse Power (tp = 10 x 1000µs)

Operating Temperature

Storage Temperature

Steady-State Power Dissipation @ TL = 75ºC (3/8”)

SYMBOL

Ppk

Tstg

VALUE

500

-65 to +175

UNIT

Watts

°C

Watts

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)

DEVICE

TYPE

REVERSE

STAND-OFF

VOLTAGE

RWM

1N6102A

1N6103A

1N6104A

1N6105A

1N6106A

1N6107A

1N6108A

1N6109A

1N6110A

1N6111A

1N6112A

1N6113A

1N6114A

1N6115A

1N6116A

1N6117A

1N6118A

1N6119A

1N6120A

1N6121A

1N6122A

1N6123A

1N6124A

1N6125A

1N6126A

1N6127A

1N6128A

1N6129A

1N6130A

1N6131A

1N6132A

1N6133A

1N6134A

1N6135A

1N6136A

1N6137A

(V)

5.2

5.7

6.2

6.9

7.6

8.4

9.1

9.9

11.4

12.2

13.7

15.2

16.7

18.2

20.6

22.8

25.1

27.4

29.7

32.7

35.8

38.8

42.6

47.1

51.7

56.0

62.2

69.2

76.0

83.6

91.2

98.8

114.0

121.6

136.8

152.0

REVERSE

LEAKAGE

CURRENT

(µA)

100

MINIMUM

BREAKDOWN

VOLTAGE

@ I

(V)

6.46

7.13

7.79

8.65

9.50

10.45

11.40

12.35

14.25

15.20

17.10

19.0

20.9

22.8

25.7

28.5

31.4

34.2

37.1

40.9

44.7

48.5

53.2

58.9

64.6

71.3

77.9

86.5

95.0

104.5

114.0

123.5

142.5

152.0

171.0

190.0

TEST

CURRENT

(mA)

175

150

125

100

MAXIMUM

CLAMPING

VOLTAGE

VC @ I

(V)

10.5

11.2

12.1

13.4

14.5

15.6

16.9

18.2

21.0

22.3

25.1

27.7

30.5

33.3

37.4

41.6

45.7

49.9

53.6

59.1

64.6

70.1

77.0

85.3

97.1

103.1

112.8

125.1

137.6

151.3

165.1

178.8

206.3

218.4

245.7

273.0

PEAK PULSE

CURRENT

Ipp

tp = 1ms

(A)

47.6

44.6

41.3

37.3

34.5

32.0

29.6

27.5

23.8

22.4

19.9

18.0

16.4

15.0

13.4

12.0

10.9

10.0

9.3

8.5

7.7

7.1

6.5

5.9

5.1

4.8

4.4

4.0

3.6

3.3

3.0

2.8

2.4

2.3

2.0

1.8

TEMPERATURE

COEFFICIENT

OF V

αVz

% / °C

0.05

0.06

0.07

0.08

0.085

0.09

0.095

0.100

0.105

0.110

MAXIMUM

REVERSE

LEAKAGE

CURRENT (Ir2)

TA=+150°C

(A)

4000

750

500

300

200

150

100

1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.

652 MITCHELL ROAD NEWBURY PARK CA 91320

Recommended Resources

A floating source instrument amplification circuit diagram

crystal controlled oscillator

Electronic ballast circuit composed of KA7522D chip

DC and DC converter circuit diagram using thyristor b

Voice controlled light switch

Computer motherboard circuit diagram 440LX2_20

USB port not found: I made a USB to serial port. When connected, it can be found on the PC and the communication is normal. However, when the board is connected to another chip CPLD, the USB cannot be found after the CPL...; hai325 stm32/stm8

How does the tenth largest company in Foxconn view it?: This morning I saw the news about the tenth suicide at Foxconn. I felt helpless. What happened to society? What happened to personality? Is it because the changes are too fast or is it because I am he...; murray Talking about work

EEWORLD University - Best DDR4 IP Demonstration, Data Rate Up to 2666 Mbits/s: Best DDR4 IP demo, data rate up to 2666 Mbits/s : https://training.eeworld.com.cn/course/2046Best-in-class DDR4 IP demonstration, capable of data rates up to 2666 Mbits/s...; chenyy Mobile and portable

Regarding the issue of non-polarity input of power supply: The power input of PCB often burns out the chip because of the wrong polarity of the input voltage. When making non-polarity input, is there any other good method besides using the diode bridge connec...; zhandizhandi Power technology

I need help from you guys: Does anyone have or know of a C language initialization program and a program for sending and receiving information for the TT50 communication module controlled by a single chip microcomputer?: I need help with the initialization program of the TT50 communication module and the C language program for sending and receiving text messages. The TT50 is controlled by a single-chip microcomputer. ...; laxers Programming Basics

October 29 live broadcast review: ST Data Center and Communication Network Power Management Solutions (including video, presentation documents, Q&A): Live broadcast time: October 29, 10:00-11:30Live broadcast topic: ST data center and communication network power management solutionsSpeech document: Click here to downloadWatch replay: Click to watch...; EEWORLD社区 Power technology

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components